Abstract: A solar cell is disclosed. The solar cell incudes a substrate, a dielectric layer formed on a backside of the substrate, and a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer. The solar cell also includes at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.

Abstract: A thermoelectric conversion material is a polycrystalline material composed of a plurality of crystal grains and has a composition represented by formula (I): Mg3+mSbaBi2?a?cAc. In the formula (I), A is at least one element selected from the group consisting of Se and Te, the value of m is greater than or equal to 0.01 and less than or equal to 0.5, the value of a is greater than or equal to 0 and less than or equal to 1.0, and the value of c is greater than or equal to 0.001 and less than or equal to 0.06. The thermoelectric conversion material has an Mg-rich region.

Abstract: A method of making a photovoltaic cell comprises the steps of providing a substrate in a vacuum, depositing an anode over the substrate, depositing a first heterojunction layer over the anode layer, depositing a second heterojunction layer over the first heterojunction layer, depositing a cathode over the second heterojunction layer, and releasing the vacuum. A photovoltaic cell is also described.

Abstract: The present disclosure provides a solar cell module, comprising (a) a laminate substrate having a first surface and a second surface opposite the first surface, (b) a solar cell positioned on the first surface of the laminate substrate, (c) a first contact pad positioned on the first surface of the laminate substrate adjacent to the solar cell, (d) a second contact pad positioned on the second surface of the laminate substrate, (e) one or more vias positioned through the laminate substrate to electrically connect the first contact pad to the second contact pad, and (f) one or more interconnects extending from the solar cell and electrically coupling the solar cell to the first contact pad.

Abstract: A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

Abstract: A TEG system is attached to a rotating shaft and generates electricity from radiant energy that is substantially radiatively transmitted through the atmosphere from a stationary source to the TEG system that is rotating with the shaft. The rotation of the shaft provides cooling to the TEG system, but not heat energy. The TEG system includes at least one TEG, each TEG equipped with an energy receiving and heat containment window and an energy conversion system in combination with controlled convection cooling enhanced by an airflow moving in response to the rotation of the rotating shaft. Individual TEGs having controlled convection cooling also are described.

Abstract: A solar cell element includes a first electrode, a second electrode, a light-absorbing layer, and a first carrier transporter. The light-absorbing layer is located between the first electrode and the second electrode. The first carrier transporter is located between the light-absorbing layer and the first electrode. The first carrier transporter includes a first semiconductor layer of a first conduction type and a first carrier introducing layer stacked in a direction from the light-absorbing layer toward the first electrode. The first carrier introducing layer is in contact with a surface of the first semiconductor layer nearer the first electrode. The first carrier introducing layer has an ionization potential smaller than an electron affinity of the first semiconductor layer.

Abstract: A system includes a high-power laser surface unit capable of generating a high-power laser beam having an output power of at least 10 kW, an optical fiber connected to the high-power laser surface unit, and at least one harvesting cell disposed around the optical fiber. The optical fiber includes an optical cladding surrounding an optical fiber core. Each harvesting cell includes an anode, a cathode, and a thermoelectric layer disposed adjacent to and electrically connected to the anode and the cathode, where the thermoelectric layer includes a polymer-based thermoelectric material.

Abstract: A power generation apparatus according to the present invention comprises: a thermoelectric conversion part including a duct and multiple thermoelectric modules arranged on a surface of the duct; a chamber having a hole formed through a lateral surface thereof to allow the thermoelectric conversion part to be inserted therethrough; a wire connected to the multiple thermoelectric modules; and a guide member having a reception space formed therein for receiving the wire, wherein the guide member comprises: a case disposed adjacent to the side surface of the chamber and including a through-hole and a wire hole through which the wire passes; a pipe disposed outside the reception space of the case to correspond to the through-hole; a molding member disposed in the reception space; and a cover disposed at the upper end of the case, and the molding member is disposed to surround the wire.

Abstract: The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB2)x(Bi2Se2.7Te0.3)1-x, (CB)x(Bi2Se2.7Te0.3)1-x, DyEz.

Abstract: The present disclosure relates to a device that includes a layer that includes a perovskite, where the layer has a first side and a second side defining a thickness, the perovskite has a bulk composition as defined by AB(X1-yXy?)3, where A includes a first cation, B includes a second cation, X includes iodide, and X? includes bromide, y is between 0.2 and 0.8, inclusively, and the thickness has a bromide concentration gradient across the thickness with a maximum concentration at or in the proximity of the first side and a minimum concentration at the second side.

Abstract: A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.

Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

Abstract: A semiconductor-based battery system comprising a primary battery that spontaneously provides power that in embodiments trickle-charges a secondary battery. The battery obtains power as heat from the surrounding environment. The primary battery is powered through internal blackbody radiation, which cools a micro-platform and provides thermoelectric power at all temperatures above absolute zero with available power increasing with temperature. Lifetime of the primary battery is not limited by electrochemical degradation over time. In embodiments, the primary battery powers an application device directly without a secondary battery.

Abstract: A thermoelectric generator includes a thermoelectric generation module, a power storage unit configured to store electric charge generated from the thermoelectric generation module, a switching unit configured to switch between supply and stop of discharge to a transceiver (transmission/reception unit) driven by discharge from the power storage unit, and a determination unit configured to determine stop of discharge from the power storage unit, in which the determination unit determines stop of discharge before completion of discharge from the power storage unit.

Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material.

Abstract: A thermoelectric generation module includes a first substrate and a second substrate, a plurality of first electrodes and second electrodes that are arranged on the first substrate and the second substrate, a thermoelectric conversion element arranged between the first electrode and the second electrode, and a terminal pin connected to the second electrode. The second substrate includes an insulator layer made of an electrical insulating material, a through-hole that penetrates the insulator layer for insertion of the terminal pin, and an annular metal layer arranged at a peripheral portion of the through-hole. A space between the terminal pin and the through-hole is sealed by solder.

Abstract: A multi-junction photovoltaic device comprises a first sub-cell and a second sub-cell, the second sub-cell overlying the first sub-cell such that incident light passes through the second sub-cell before the first sub-cell. The light-receiving surface of the second sub-cell comprises a layer of a transparent conductive material and one or more metal tracks extending in a first direction and in contact with the layer of transparent conductive material. A layer of electrically insulating material is provided on the light receiving surface of the second sub-cell located under one end of the one or more metal tracks at an edge of the device, and an electrically conductive pad is provided over the layer of electrical insulator and in electrical contact with the one or more metal tracks to provide electrical contact to an external circuit.

Abstract: Provided is a photovoltaic module, including: a plurality of solar cell strings arranged at intervals and each including a front surface and a rear surface arranged opposite to each other; a first encapsulation adhesive film and a back panel located on the rear surface of the solar cell string; and first embossing structures provided on one side of the back panel away from the first encapsulation adhesive film. An angle ? between a side surface of the first embossing structure and a plane of the back panel is in a range from 42° to 80°.

Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13).