Abstract: A method produces a capacitor. On a substrate, a polysilicon layer is formed over an insulating region. A first metal-silicide layer is formed on top of the polysilicon layer. A dielectric layer is formed on top of the first metal-silicide layer. A second metal-silicide layer is formed on top of the dielectric layer. The second metal-silicide layer and the dielectric layer are etched to form a top electrode and dielectric region. The first metal-silicide layer and the polysilicon layer are etched to form a bottom electrode.

Abstract: A fused chip-type solid electrolytic capacitor is provided in which a cathode terminal comprises a connecting portion and a leading portion formed separately to each other, a fuse is provided between the connecting portion and leading portion thereof in a cross linking manner to connect them electrically, and an electrically insulative protective body provided thereon to connect them mechanically and integrally. The cathode terminal formed as shown above is connected through said connecting portion to a cathode layer of a capacitor element, and led through said leading portion to the outside of an external resin. In this capacitor, the electrically insulative protective body for coupling the connecting portion and leading portion of the cathode terminal may cover a fuse itself and the positions where the fuse is connected correspondingly to the connecting portion and leading portion, but it is preferably to cover a surface of said leading portion on the capacitor element side as well.

Abstract: A ferroelectric capacitor for use in integrated circuits and having an asymmetric operation. The capacitor has a bottom electrode, a layer of ferroelectric material over the bottom electrode, a dielectric spacer on the sides of the bottom electrode and ferroelectric material, and a top electrode over the layer of ferroelectric material. The bottom and top electrode are comprised of different materials. Alternatively, an ion implantation region is formed in the top surface of the layer of ferroeletric material. A method of forming the asymmetric ferroelectric capacitor is also disclosed.

Abstract: A method for manufacturing ceramic capacitors of the lead filled type comprises coating the end surfaces of a ceramic monolith having internal voids opening to the ends with a termination paste. The paste includes glass frit, a metal component wettable by lead, i.e. silver, binder and solvent, the characterizing feature of the paste being the inclusion of reducible metal salts of a metal wettable by lead, the salts undergoing volumetric diminution when reduced from the salt to the metallic state. When the termination paste is sintered, reduction of the metallic salt provides the termination with a porous latticework. Molten lead or lead alloys are injected through the now porous, sintered termination paste. The disclosure further relates to a capacitor made in accordance with the method described.

Abstract: Prior capacitor assemblies used in high power applications have been difficult to mount on circuit boards and have generated large amounts of heat which leads to operational difficulties. In order to overcome these problems, a capacitor assembly includes first and second spaced thermally conductive members each having a channel therethrough for passage of a fluid coolant and a capacitor having first and second electrodes. Thermal paths are established between the capacitor and the fluid coolant in the channels of the first and second members so that heat developed by the capacitor is carried away during operation.

Abstract: A focal plane shutter has at least one shutter blade group comprised of a leading blade and a set of trailing blades. A first parallel link mechanism is pivotally connected at two spaced locations to the leading blade to effect displacement of the leading blade relative to a shutter opening. A second parallel link mechanism is pivotally connected at two or more spaced locations to the set of trailing blades to effect displacement of the trailing blades relative to the shutter opening. The distance between the two pivotal connections of the first parallel link mechanism is greater than the distance between the at least two pivotal connections of the second parallel link mechanism.

Abstract: A high surface area electrode formed from filler particles having a high surface to volume ratio in a binder able to support the conduction of ions. The binder may be a hydrophilic polymer and hydrogel able to swell to incorporate a solvent and its dissolved ionic material while retaining its mechanical strength. The swelling may be regulated by control of the degree of cross-linking of the binder material.

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO.sub.2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO.sub.2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO.sub.2 which is commonly observed when the SiO.sub.2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO.sub.2 layer from the ferroelectric material and/or the platinum regions.

Abstract: A tubular sound absorbent device includes the cylindrical wall closed by top and bottom end walls to define an internal chamber. Located within the chamber are various sound wave attenuating devices including those of tubular configuration as well as those of frust-conical shape. The sound wave attenuating components may also include perforated tubes entirely confined within the sound absorbent unit or with a tube extending outwardly for termination in a companion structure.

Abstract: A change-over type of loading device assembly includes a low-voltage small-capacity type of capacity-variable type loading element in which the capacity is incrementally variable by a capacity change-over element, a transformer connected to said capacity-variable type loading element, a connecting terminal mounted on said capacity-variable type loading element or said transformer, and a plurality of fixed loading elements having the respective connecting terminals and connected in parallel with each other together with said capacity-variable type loading element. These fixed loading elements include a circuit formed by connectively combining a plurality of resistors with each other and comprising element bodies, each receiving the output power from a power generator, and change-over devices for changing one of said resistors in said circuit to another depending upon operation so as to allow the withstand voltage of said circuit to correspond to the output power from said power generator.

Abstract: After exposure of all frames of a film contained in a lens-fitted photographic film, a wall portion of a film take-up chamber of the film package is removed, thereby to provide a film removal opening, through which the exposed film is drawn out directly from the film package. In the film take-up chamber, a cassette or a take-up spool is disposed for winding up the exposed film. So as not completely to wind the exposed film into the cassette, a film arresting member is provided. A film package holder disposed at a film entrance of a film processor can selectively hold the film package or a film cassette taken out from a camera.

Abstract: The present invention provides a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 as a main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of ceramic capacitor together with the materials of inner electrodes was made possible in the manufacturing process. Besides, material to be made semiconductive is added to the main component of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 excess in Ti, the materials of Mn-Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process, are also added to the main component.

Abstract: A metal-insulator-metal (MIM) capacitor for monolithic microwave integrated circuit applications of the capacitoraround-via type having a bottom plate 36, a dielectric 40, and a top plate 44 which substantially surround, but do not physically overlay, via hole 32 and provide a low-inductance connection between a frontside MIM capacitor and a backside ground plane.

Abstract: The present invention provides for a capacitor structure on a semiconductor substrate with an enhanced capacitance. The structure has a first layer of conducting strips parallel to each other on the substrate and a second layer of conducting strips which are parallel to each other. The second layer strips overlie and are substantially congruent to the first layer conducting strips in a top view of the semiconductor substrate. The first layer conducting strips are alternately connected to a first node and a second node, and the second layer conducting strips are alternately connected to the first node and the second node in such a manner that each first layer conducting strip and a second layer conducting strip overlying the first layer conducting strip are connected to different nodes. The first and second nodes form two opposing nodes of the capacitor structure.

Abstract: A polarizable material that includes a nonisotropic solution useful for making electrical devices. In one embodiment, the polarizable material is comprised of commercially available solid bar soap, neat soap or a polymorphic solid solution and employed as the dielectric in a capacitor or an electrolyte in a supercapacitor. In another embodiment the nonisotropic solution is employed as an electrolyte in an electrochemical battery.

Abstract: In a chip-type solid electrolytic capacitor with a fuse, a cathode terminal has an inside connecting portion, an outside lead portion, and a fuse for bridging between the inside connecting portion and the outside lead portion. Predetermined portions including the fuse are protectively insulated by protective resin which is provided with a projecting portion. Part of the protective resin is exposed from a molding resin. The cathode terminal arranged as described above is preliminarily formed as an integral article. In the assembling process, a cathode layer of a capacitor element and the inside connecting portion are assembled together so as to be adhered and conducted to each other.

Abstract: A stacked capacitor having a fin structure, and a method of fabrication. A first electrode with a fin structure is formed on a semiconductor substrate and a second electrode is formed over the first electrode and spaced therefrom by a dielectric film. The first electrode comprises an electrically conductive material, different from polycrystalline silicon, and a polycrystalline silicon film containing an impurity and covering the electrically conductive material. Thereby, the film thickness of the storage electrode of the fin capacitor is reduced and the corrugation of the surface of a memory device by the capacitor structure is mitigated.

Abstract: A variable capacitor comprises a solid dielectric disc having one electrode disposed on one face thereof. A flexible electrode is selectively urged into contact with a second face of the disc, parallel to the first face. A translatable stem drives the second electrode into contact with the first surface. The variable capacitor is used in an implement which is moved relative to a position detecting tablet. The variable capacitor is part of a tuned circuit having a resonant frequency approximately the same as the frequency of AC energy applied to coils of the position detecting tablet.

Abstract: This mounting assembly (10) for a loudspeaker (30), or similar fixture, includes an enclosure (12) for mounting the loudspeaker (30) to a ceiling (C) or the like. The enclosure (12) includes a wall attached portion (16) having an interior annular flange (20) and an exterior annular flange (22) connected by a peripheral sidewall (24). The loudspeaker flange (32) is attached to the interior flange (20) by removable fasteners (36) and the enclosure is attached to the ceiling by fasteners (40). A baffle (60) is removably attached to the enclosure exterior flange (22) by fixed fasteners (62). The enclosure (12), in one embodiment, includes a fixedly attached closed portion (14) and the enclosure portions are attached to a ceiling (C) by swivel clamping members (50).

Abstract: A ferroelectric capacitor for a memory device including a substrate, a bottom electrode and a top electrode. Between the bottom and top electrodes is either an alternating plurality of layers of ferroelectric material and intermediate electrodes or a plurality of layers of ferroelectric material. A method for forming the same through establishing one layer over the other is also disclosed.