Abstract: A multi-beam shaped-beam electron beam lithography system employs conventional lenses and magnetic deflectors, with an array of lithographically fabricated electrodes disposed about a central axis to simultaneously and independently deflect electron beams in beamlet exposure ranges separated transversely from one another within a subfield, so that subfields overlap.
Type:
Grant
Filed:
January 30, 2002
Date of Patent:
September 2, 2003
Assignee:
International Business Machines Corporation