Abstract: An electrical connection device and assembly method thereof includes a substrate with a plurality of contacting portions arranged on a surface thereof; a chip module having a plurality of terminals inclining in one direction and compressed and contacted with the contacting portions correspondingly; at least one restricting structure which restricts the chip module to move a distance relative to the substrate depending on the compression deformation of the terminals when the terminals are contacted with the contacting portions; and at least one elastic element just producing deformation when the chip module moves the distance. When the terminals are compressed and contacted with the contacting portions, the restricting structure restricts the chip module to move the distance depending on the compression deformation of the terminals, so that the elastic element just produces deformation, which make the chip module only move in the direction opposite to the deformation direction of the terminals.

Abstract: The temperature at which an oxide dielectric thin film is formed can be made lower than conventional by reducing the concentration of oxygen in an atmosphere for forming the thin film. As a result, there can be formed an oxide dielectric thin film which has a crystal structure preferentially oriented at a crystal plane allowing a polarization axis to be directed in the vertical direction, which eliminates any reaction with an electrode material, and controls the growth of crystal grains. The use of such an oxide dielectric thin film can provide an oxide dielectric element having a high spontaneous polarization and a small coercive field. Consequently, it is possible to achieve a dielectric element having a high density of integration for detecting reading and writing operations, and a semiconductor device using the same.