Abstract: Semiconductor devices that utilize a silicon-containing dielectric layer are disclosed. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of the deposited material to form the dielectric layer. The silicon-containing dielectric layer provides for improved or smaller semiconductor devices by reducing leakage and increasing the dielectric constant.
Type:
Grant
Filed:
August 31, 2000
Date of Patent:
June 10, 2003
Assignee:
Micron Technology, Inc.
Inventors:
Don Carl Powell, Garry Anthony Mercaldi
Abstract: A semiconductor device having a trench interconnection is formed by providing a semiconductor substrate with an insulating film formed thereon. A trench is formed in the insulating film, and an amorphous phase barrier film of WSixNy or WCxNy in an amorphous phase is formed.
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