Abstract: A metallization process for manufacturing semiconductor devices and a system that uses the same that minimizes corrosion failures in aluminum patterns. The process for the metal pattern formation is carried out by loading a semiconductor wafer into an etching chamber, the semiconductor wafer having a photoresist pattern formed over a metal material layer, stabilizing the environment in the etching chamber, main-etching the metal material layer to the etch-end point by using the photoresist pattern as an etch mask while supplying etching gas containing chlorine (Cl2) into the etching chamber, over-etching the metal material layer for a certain period of time over the etch-end point so as to form metal patterns, purging the etching chamber after the over-etching step, and unloading the wafer from the etching chamber. The pressure in the transfer module is optimized, and the load lock chamber is continuously purged.