Abstract: The present invention relates to a laser system and method which enables fast, accurate laser frequency tuning. In particular, the present invention includes only one laser and only one absolute frequency locking loop to perform the same fast frequency tuning than previous seed laser systems.

Abstract: Laser diode packages include a rigid thermally conductive base member that includes a base member surface situated to support at least one laser diode assembly, at least one electrode standoff secured to the base member surface that has at least one electrical lead having a first end and a second end with the first end secured to a lead surface of the electrode standoff, and a lid member that includes a lid portion and a plurality of side portions extending from the lid portion and situated to be secured to the base member so as to define sides of the laser diode package, wherein at least one of the side portions includes a lead aperture situated to receive the second end of the secured electrical lead that is insertable through the lead aperture so that the lid member extends over the base member to enclose the laser diode package.

Abstract: A semiconductor laser source wherein a waveguide in which a filter is produced is made of a material that is less sensitive to temperature. The laser source also includes a tuning device able to shift the possible resonant wavelengths ??Rj of a Fabry-Pérot optical cavity in response to an electrical controlling signal, a sensor able to measure a physical quantity representative of the difference between a central wavelength ?Cf of the filter and one of the possible wavelengths ?Rj, and an electronic circuit able to generate, depending on the physical quantity measured by the sensor, the electrical signal controlling the tuning device in order to keep one wavelength ?Rj at the center of each passband of the filter that selects an emission wavelength ?Li of the laser source.

Abstract: A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.

Abstract: The disclosed method and apparatus for stabilizing a mode-locked regime of a fiber ring oscillator based on a NPR include tapping a portion of light, which has a broad spectral bandwidth, from a fiber ring resonator into at least first and second control channels. The control channels are configured to guide respective first and second fractions of the tapped portion. One of the control channels is provided with a bandpass filter operative to extract a region from the broad spectral bandwidth. The fractions with respective full spectral bandwidth and region thereof are then evaluated in a central processing unit which is operable to generate a control signal if a predetermined criterion is not met. The control signal is received by one or more polarization controller units operative to dynamically modulate a state of polarization of light in the fiber ring resonator until the evaluation meets the predetermined criterion.

Abstract: A wavelength-tunable external cavity laser comprises a semiconductor optical amplifier chip and a laser external cavity, the laser external cavity comprising a grid filter, a phase adjustor and a silicon-based micro-ring chip, the grid filter and the silicon-based micro-ring chip constituting a wavelength-tunable optical filter which implements wavelength tuning by spectral tuning of the grid filter and/or the silicon-based micro-ring chip. A micro-ring filter in the silicon-based micro-ring chip of the tunable external-cavity laser is manufactured by adopting a mature silicon light technology, which can greatly reduce a manufacturing difficulty of the adjustable filter, and reduce the manufacturing cost of a device. An existing external-cavity adjustable technology platform may be used for smooth transition, so as to improve the degree of integration of this type of device and simplify a preparation process.

Abstract: A waveguide includes a narrow waveguide, wide waveguides, and tapered waveguides. A width Ww of the wide waveguides is wider than A width Wn of the narrow waveguide. The tapered waveguides have their width continuously varying so as to couple the narrow waveguide and the wide waveguides, respectively. Assuming a length of the waveguide as L and an area as S, Ks=S/(Wn·L) and 1<ks?1.5 are satisfied.

Abstract: A semiconductor optical device includes a laminated structure constituted of a first compound semiconductor layer of an n type, an active layer, and a second compound semiconductor layer of a p type, the active layer including at least 3 barrier layers and well layers interposed among the barrier layers, and the semiconductor optical device satisfying Egp-BR>Egn-BR>EgWell when a bandgap energy of the barrier layer adjacent to the second compound semiconductor layer is represented by Egp-BR, a bandgap energy of the barrier layer between the well layers is represented by EgWell, and a bandgap energy of the barrier layer adjacent to the first compound semiconductor layer is represented by Egn-BR.

Abstract: A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.

Abstract: Systems, devices, methods, and computer-readable media for preventing laser kink failures. A laser diode device can include one or more laser diodes configured to emit electromagnetic radiation coherently. The laser diode device can also include one or more submounts upon which the one or more laser diodes are mounted. The one or more submounts can include one or more through vias including one or more fill materials different from a material of the one or more submounts. Further, one or more properties of the one or more through vias in the one or more submounts can be selected to reduce an amount of mismatch between an effective coefficient of thermal expansion of the one or more laser diodes and an effective coefficient of thermal expansion of the one or more submounts.

Abstract: A laser apparatus is provided, which includes an optical reflection and gain unit, an optical modulation unit and a polarizing selection unit. The optical reflection and gain unit includes a gain medium and at least two dichroic surfaces, and is configured to generate a laser beam. The optical modulation unit and the optical reflection and gain unit form a cavity, and the optical modulation unit is configured to adjust phase boundary conditions of the cavity. The optical modulation unit includes portions that respectively correspond to optical phase boundaries in the cavity, so as to allow an optical field in the cavity to pass through the optical modulation unit at least twice. The polarizing selection unit is disposed between the optical reflection and gain unit and the optical modulation unit, and is configured to adjust the polarizing direction of the optical field incident to the optical modulation unit.

Abstract: A liquid crystal display including: a display area which includes an upper substrate, a lower substrate, pixels and a liquid crystal layer interposed between the upper and lower substrates; and a measuring unit including a tag portion, a common voltage applying portion, and a pixel voltage applying portion, in which the common voltage applying portion and the tag portion, and the pixel voltage applying portion and the tag portion are connected to each other, a data conductor, a common electrode, a passivation layer, and a pixel electrode are disposed on the common voltage applying portion with substantially the same thickness as at least one of the pixels of the display area, a first part of the data conductor of the common voltage applying portion directly contacts the pixel electrode, and a second part of the data conductor of the common voltage applying portion directly contacts the common electrode.

Abstract: A display device includes a flexible display panel and a cover window. The flexible display panel includes a display area to display an image and a pad area extending from the display area. The pad area is bent from the display area. The cover window is disposed on the flexible display panel.

Abstract: A light source assembly includes a housing assembly and at least two sets of disparate light sources that are coupled to the housing assembly. The sets of disparate light sources include a first plurality of disparate light sources; and a second plurality of disparate light sources. Each plurality of disparate light sources includes a first light source that generates a first light beam having a first center wavelength and a second light source that generates a second light beam having a second center wavelength that is different than the first center wavelength. The first plurality of disparate light sources generates a first output beam that is directed along a first central beam axis. The second plurality of disparate light sources generates a second output beam that is directed along a second central beam axis that is spaced apart from the first central beam axis by at least approximately sixty degrees.

Abstract: In an example, a tandem pumped fiber amplifier may include a seed laser, one or more diode pumps, and a plural core fiber including a first core and a second core, the second core surrounding the first core. The plural core fiber may include a first section to operate as an oscillator and a second different section to operate as a power amplifier. The one or more diode pumps may be optically coupled to the first section of the plural core fiber, and the seed laser may be optically coupled to the first core.

Abstract: This disclosures provides a quantum dot light emitting device, a backlight module, and a liquid crystal display device, the quantum dot light emitting device including: a light emitting device configured to generate exciting light at a first wavelength; a first quantum dot package layer configured to absorb the exciting light at the first wavelength, and to generate converted light at a second wavelength; and a second quantum dot package layer configured to absorb the exciting light at the first wavelength, and to generate converted light at a third wavelength; wherein the first quantum dot package layer is located between the light emitting device and the second quantum dot package layer, and the third wavelength is shorter than the second wavelength, and longer than the first wavelength.

Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

Abstract: An illumination apparatus includes a pair of substrates arranged oppositely to each other with a distance, and a light source disposed on a side surface of one of the pair of substrates. The illumination apparatus further includes an electrode that is provided on a surface of each of the pair of substrates and generates an electric field in a direction intersecting perpendicularly to the surface of the substrate. The illumination apparatus further includes a light modulation layer that is disposed at a clearance between the pair of substrates and is configured to exhibit scattering property or transparency to light from the light source, based on magnitude of the electric field generated by the electrode. The electrode includes a plurality of first electrode blocks on a surface of one of the pair of substrates.

Abstract: A liquid crystal display panel is provided and includes a pair of substrates arranged face to face so as to sandwich a liquid crystal layer, a lower electrode formed on a lower substrate, an upper electrode formed on the lower substrate through an insulating layer, in which plural slits are formed in each sub-pixel, wherein each of the plural slits is formed as an aperture in which both ends thereof in the longitudinal direction are closed, and an alignment film formed so as to cover a surface of the upper electrode and the insulating layer. The plural slits have different widths at both ends of slits in a longitudinal direction, and a rubbing direction of the alignment film is a direction crossing longitudinal edges of each of the slits.

Abstract: An active grating, a three-dimensional display device and a three-dimensional display method are provided.