Patents Examined by Durmazd Ojan
  • Method for manufacturing bipolar transistor by selective epitaxial growth of base and emitter layers
    Patent number: 5096844
    Abstract: The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.
    Type: Grant
    Filed: August 24, 1989
    Date of Patent: March 17, 1992
    Assignees: Licentia Patent-Verwaltungs-GmbH, Telefunken electonic GmbH
    Inventors: Ulf Konig, Klaus Worner, Erich Kasper