Abstract: A flexible substrate has at least one bendable region. The flexible substrate includes a flexible base, a first electrode layer disposed on the base, a first insulating layer disposed on a side of the first electrode layer away from the base, and a second electrode layer disposed on a side of the first insulating layer away from the base. The first electrode layer includes at least one first detection electrode, and the second electrode layer includes at least one second detection electrode. An orthogonal projection of a first detection electrode on the base overlaps at least partially with an orthogonal projection of a second detection electrode on the base. A region where orthogonal projections of the first detection electrode and the second detection electrode on the base are located overlaps with a bendable region.

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

Abstract: A 3D memory array in which epitaxial source/drain regions which are horizontally merged and vertically unmerged are used as source lines and bit lines and methods of forming the same are disclosed. In an embodiment, a memory array includes a first channel region over a semiconductor substrate; a first epitaxial region electrically coupled to the first channel region; a second epitaxial region directly over the first epitaxial region in a direction perpendicular to a major surface of the semiconductor substrate; a dielectric material between the first epitaxial region and the second epitaxial region, the second epitaxial region being isolated from the first epitaxial region by the dielectric material; a gate dielectric surrounding the first channel region; and a gate electrode surrounding the gate dielectric.

Abstract: Consumables for cutting torches include consumables that define a parallel plasma channel and/or a steep, elongated plasma chamber. Additionally, the consumables may define smooth, rounded edges between different geometries of the plasma channel (e.g., at transitions between straight and angles sections) and/or between the plasma channel and the plasma chamber. That is, the consumables may provide a plasma channel that does not converge, diverge, or define any corners and/or a plasma channel that transitions to the plasma chamber without defining any corners.

Abstract: The present disclosure provides a method for forming a three-dimensional memory device. The method can comprise forming a film stack with a plurality of dielectric layer pairs on a substrate, forming a channel structure region in the film stack including a plurality of channel structures, and forming a first staircase structure in a first staircase region and a second staircase structure in a second staircase region. Each of the first staircase structure and the second staircase structure can include a plurality of division block structures arranged along a first direction. A first vertical offset defines a boundary between adjacent division block structures. Each division block structure includes a plurality of staircases arranged along a second direction that is different from the first direction. Each staircase includes a plurality of steps arranged along the first direction.

Abstract: Provided are an indication information sending method, apparatus and system, a storage medium, and an electronic device, where the indication information sending method includes: sending, by a first access and mobility management function (AMF), first indication information to a first target network element, where the first indication information is used for indicating whether a packet data unit (PDU) session is capable of interworking with a target network system.