Abstract: A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufacturing the same. The devices are electrically isolated from each other by a P-N junction isolation grid produced by the thermomigration of metal-rich wires through a semiconductor substrate by thermal gradient zone melting processing techniques.
Type:
Grant
Filed:
November 22, 1974
Date of Patent:
September 21, 1976
Assignee:
General Electric Company
Inventors:
Manuel L. Torreno, Jr., Bruno F. Kurz, deceased, Surinder Krishna