Abstract: A process of forming a lateral PNP transistor includes the steps of: providing a chip of semiconductor material including an isolated N- device region; implanting N dopant material at a relatively low power and low dosage into a selected implant region of the device region; implanting N dopant material at a relatively higher power and higher dosage into the implant region; and forming emitter and collector regions in the device region such that an intrinsic base region is defined between the collector and emitter regions in the implant region.
Type:
Grant
Filed:
October 30, 1990
Date of Patent:
September 3, 1991
Assignee:
International Business Machines Corporation
Inventors:
Peter A. Habitz, Chang-Ming Hsieh, Yi-Shiou Huang