Abstract: A semiconductor device having a conductive layer of small conductive resistance and including only a small step is provided. The semiconductor device comprises a first source line extending in one direction and a silicon oxide film having a contact trench reaching the first source line. The contact trench extends in one direction along the first source line. The semiconductor device further comprises a second source line which is formed in the contact trench. A part of the second source line exposes a partial surface of the first source line to be in contact with this partial surface of the first source line.

Abstract: A method for forming solder bumps on an electronic structure including the steps of first providing a mold made by a sheet of a mold material having a thickness greater than that of the solder bumps to be formed, the mold material has sufficient optical transparency so as to allow the inspection of a solder material subsequently filled into the mold cavities that are formed in the mold material, and a coefficient of thermal expansion that is substantially similar to the substrate which the mold will be mated to, forming a multiplicity of mold cavities in the sheet of mold material, filling the multiplicity of mold cavities with a solder material, cooling the mold to a temperature that is sufficient to solidify the solder material in the multiplicity of mold cavities, positioning the mold intimately with the electronic structure such that the cavities facing the structure, and heating the mold and the structure together to a temperature sufficiently high such that the solder material transfers onto the electro