Abstract: A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

Abstract: The invention relates to the use of a metal complex, which has at least one ligand of the formula R1—N3—R2, wherein R1 and R2 are hydrocarbon moieties, for depositing the metal or a compound of the metal from the gas phase. The invention further relates to methods for depositing metals from the metal complexes, and to metal complexes, substituted triazene compounds and to methods for the production thereof.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

Abstract: A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber.

Abstract: A thin film optical lens and method for coating an optical substrate serves to apply alternating layers, with varying thicknesses, of a high index dielectric material and a low index dielectric material on first and second surfaces of an optical substrate. The high and low index dielectric materials are layered through thin film deposition. The low index dielectric material is SiO2. The high index dielectric material is ZrO2 and/or Indium Zinc Oxide. The spectral results from application of high and low index dielectric materials reduce infrared radiation, block HEV light transmission, and reduce backside ultraviolet reflections, while also increasing visible (ultraviolet) light transmission through the optical substrate. Thus, the layering of dielectric materials on the first surface of optical substrate reflects up to 40% of the infrared radiation; and the second surface of optical substrate transmits up to 99% of ultraviolet light in the wavelength range between 300 to 400 nanometers.

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: A method for manufacturing a coated lens by applying at least one single electromagnetic pulse to convert a coating precursor material into at least one coating. The electromagnetic pulse is delivered to the coating precursor material applied on a surface of an uncoated or precoated optical lens substrate. The at least one single electromagnetic pulse is applied from an electromagnetic source such as a flash lamp, a halogen lamp, a directed plasma arc, a laser, a microwave generator, an induction heater, an electron beam, a stroboscope, or a mercury lamp.

Abstract: Methods are provided for forming a particular multi-layer micron-sized particle that is substantially transparent, yet that exhibits selectable coloration based on its physical properties. The disclosed physical properties of the particle are controllably selectable refractive indices to provide an opaque-appearing energy transmissive material when pluralities of the particles are suspended in a substantially transparent matrix material. Multiply-layered (up to 30+ constituent layers) particles result in an overall particle diameter of less than 5 microns. The material suspensions render the particles deliverable as aspirated or aerosol compositions onto substrates to form layers that selectively scatter specific wavelengths of electromagnetic energy while allowing remaining wavelengths of the incident energy to pass.

Abstract: The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

Abstract: A method for manufacturing a coated lens by applying at least one single electromagnetic pulse to convert a coating precursor material into at least one coating. The electromagnetic pulse is delivered to the coating precursor material applied on a surface of an uncoated or precoated optical lens substrate. The at least one single electromagnetic pulse is applied from an electromagnetic source such as a flash lamp, a halogen lamp, a directed plasma arc, a laser, a microwave generator, an induction heater, an electron beam, a stroboscope, or a mercury lamp.

Abstract: A method of manufacturing a sterile stack of peelable lenses includes coating a first lens (or stack of lenses) with a first adhesive coating, heating the first adhesive coating to initiate curing, exposing the first adhesive coating to ultraviolet light to continue curing, laminating a second lens (or stack of lenses) onto a surface of the first adhesive coating to produce a stack of lenses, coating the second lens with a second adhesive coating, heating the second adhesive coating to initiate curing, exposing the second adhesive coating to ultraviolet light to continue curing, laminating a third lens (or stack of lenses) onto a surface of the second adhesive coating to add the third lens to the stack of lenses, and exposing the stack of lenses to an electron beam to continue curing of the first and second adhesive coatings.

Abstract: A method for manufacturing a spectacle lens having a lens substrate and at least one coating is disclosed. The method includes providing a lens substrate having an uncoated or precoated front surface and an uncoated or precoated back surface, applying at least one coating to at least one of the surfaces of the lens substrate, the surface of the at least one coating being modifiable when contacted with at least one medium able to modify the surface of the at least one coating, contacting the surface of the at least one coating, partially or completely, with the at least one medium, considering the individual peripheral refraction, obtaining the spectacle lens having the lens substrate and the at least one coating, the surface of the at least one coating being modified according to the individual peripheral refraction.

Abstract: Methods for forming a polycrystalline molybdenum film over a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; depositing a nucleation film directly on an exposed surface of the substrate, wherein the nucleation film comprises one of a metal oxide nucleation film or a metal nitride nucleation film; and depositing a polycrystalline molybdenum film directly on the nucleation film; wherein the polycrystalline molybdenum film comprises a plurality of molybdenum crystallites having an average crystallite size of less than 80 ?. Structures including a polycrystalline molybdenum film disposed over a surface of a substrate with an intermediate nucleation film are also disclosed.

Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

Abstract: A film forming method is a method of forming a film on a substrate top face including a first region in which a metal or a semiconductor is exposed and a second region in which an insulator is exposed. The method includes a SAM forming process of forming a self-assembled monolayer film of a perfluoropolyether group-containing compound on the first region and a film growth process of forming a predetermined film on the second region after execution of SAM forming process.