Patents Examined by Elizabeth A Burkhart
  • Patent number: 10597778
    Abstract: A deposition method, including providing a channel through a deposition apparatus, feeding precursor vapor into the channel, and depositing material from the precursor vapor onto a substrate on its way through the deposition apparatus by exposing the substrate to the precursor vapor and to alternating photon exposure and shade periods within the channel.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: March 24, 2020
    Assignee: Picosun Oy
    Inventor: Timo Malinen
  • Patent number: 10597335
    Abstract: Provided is a method including obtaining ceramic matrix composite (CMC) with a first matrix portion including a silicon carbide and silicon phase dispersed therewithin, disposing a coating thereupon to form a sealed part, and forming thereupon another segment comprising a CMC, which may be another matrix portion including a silicon carbide and a silicon phase dispersed within therewithin. Also provided is a gas turbine component with a CMC segment including a matrix portion including a silicon carbide and a silicon phase dispersed therewithin, a sealing layer including silicon carbide enclosing the first segment, and a second segment on the sealing layer, wherein the second segment includes a melt-infiltrated CMC having a matrix portion including a silicon carbide and a silicon phase dispersed therewithin.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: March 24, 2020
    Assignee: GENERAL ELECTRIC COMPANY
    Inventors: Daniel Gene Dunn, Gregory Scot Corman, Jared Hogg Weaver
  • Patent number: 10580625
    Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: March 3, 2020
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventor: Peter Maschwitz
  • Patent number: 10577691
    Abstract: Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing N cycles of film deposition. Thereafter, the methods may further include transferring the first set of substrates from the first set of process stations to a second set of one or more process stations, loading a second set of one or more substrates at the first set of process stations, and depositing film material onto the first and second sets of substrates by performing N? cycles of film deposition, wherein N? is not equal to N. Also disclosed are apparatuses and computer-readable media which may be used to perform similar operations.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: March 3, 2020
    Assignee: Lam Research Corporation
    Inventors: Romuald Nowak, Hu Kang, Adrien LaVoie, Jun Qian
  • Patent number: 10577386
    Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: March 3, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Patent number: 10573497
    Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of Y2O3—ZrO2 and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: February 25, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Xiaowei Wu, David Fenwick, Jennifer Y. Sun, Guodong Zhan
  • Patent number: 10562778
    Abstract: Improved sealing of Siemens reactor electrodes which results in improved reactor campaign times, is accomplished by use of an electrically insulating ring in combination with two seals, a first seal located in a groove in the insulating ring or in a groove in the reactor base plate adjacent the insulating ring, and a second seal not contained in a groove.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: February 18, 2020
    Assignee: WACKER CHEMIE AG
    Inventors: Dominik Rennschmid, Heinz Kraus, Christian Kutza
  • Patent number: 10556822
    Abstract: Certain example embodiments relate to a coated article including at least one infrared (IR) reflecting layer of a material such as silver or the like in a low-E coating, and methods of making the same. In certain cases, at least one layer of the coating is of or includes nickel and/or titanium (e.g., NixTiyOz). The provision of a layer including nickel titanium and/or an oxide thereof may permit a layer to be used that has good adhesion to the IR reflecting layer, and reduced absorption of visible light (resulting in a coated article with a higher visible transmission). When a layer including nickel titanium oxide is provided directly over and/or under the IR reflecting layer (e.g., as a barrier layer), this may result in improved chemical and mechanical durability. Thus, visible transmission may be improved if desired, without compromising durability; or, durability may simply be increased.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: February 11, 2020
    Assignees: GUARDIAN GLASS, LLC., GUARDIAN EUROPE S.À R.L.
    Inventors: Marcus Frank, Anton Dietrich, Greg Miller, Richard Blacker, Muhammad Imran, Jean-Marc Lemmer
  • Patent number: 10558116
    Abstract: A synthetic quartz glass substrate is prepared by furnishing a synthetic quartz glass block, coating two opposite surfaces of the block with a liquid having a transmittance of at least 99.0%/mm at the wavelength of birefringence measurement, measuring a birefringence distribution on the block by letting light enter one coated surface and exit the other coated surface, and sorting the block to an acceptable group or unacceptable group, based on the measured birefringence distribution.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: February 11, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hisashi Yagi, Daijitsu Harada, Masaki Takeuchi, Kazuo Shirota, Kazuhiko Aoki
  • Patent number: 10550466
    Abstract: Siemens CVD reactors are sealed in a manner which facilitates long production campaigns without refurbishing the seals, by the use of at least two seals, and an electrically insulating member having a thermal conductivity of from 1 to 200 W/mK, a sustained use temperature of at least 400° C., and a resistivity of more than 1·109 ?cm.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: February 4, 2020
    Assignee: WACKER CHEMIE AG
    Inventors: Heinz Kraus, Christian Kutza, Dominik Rennschmid
  • Patent number: 10551731
    Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 4, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ralf Hofmann, Majeed Foad, Cara Beasley
  • Patent number: 10543516
    Abstract: Liquid-impregnated textured coatings containing one or more materials on a variety of surfaces are described herein. The coatings can be prepared by chemical vapor deposition techniques or other techniques known in the art. The texture can be random, fractal, or patterned. The texture can be pores, cavities, and/or micro- and/or nanoscale features/structures. The capillary forces arising from the nano- or microscopic texture of the coating stabilizes the liquid within the textured features and at the surface of the coating resulting in non-wetting properties for a variety of surfaces. They coatings may be formed in a single layer or as multiple layers. In order to maximize ease of deposition and processing, the coating may be formed of graded composition to optimize both bulk and surface properties without the need for multiple coatings.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: January 28, 2020
    Assignee: GVD Corporation
    Inventors: Aleksandr J. White, William Shannan O'Shaughnessy, Seth Johnson, Karen K. Gleason
  • Patent number: 10539874
    Abstract: Provided is a composition for forming an organic anti-reflective coating layer used in a negative tone development, which not only enhance an adhesion to a photoresist while having a high refractive index and a high etch rate but also improve a pattern profile of undercut etc. The composition an isocyanurate compound containing at least one moiety which is represented by Formula 2; a polymer represented by Formula 3 and an organic solvent for dissolving the above-mentioned components.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: January 21, 2020
    Assignee: DONGJIN SEMICHEM CO., LTD.
    Inventors: Hyo Jung Roh, Ji Hyun Kim, Seung Jin Kim, Hyun Jin Kim
  • Patent number: 10538844
    Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: January 21, 2020
    Assignee: FEI Company
    Inventors: James Bishop, Toan Trong Tran, Igor Aharonovich, Charlene Lobo, Milos Toth
  • Patent number: 10541127
    Abstract: A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: January 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-suk Tak, Gi-gwan Park, Jin-bum Kim, Bon-young Koo, Ki-yeon Park, Tae-jong Lee
  • Patent number: 10533023
    Abstract: A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: January 14, 2020
    Assignee: WAYNE STATE UNIVERSITY
    Inventors: Charles H. Winter, Joseph Peter Klesko
  • Patent number: 10533250
    Abstract: Described herein is a technique capable of improving a quality of a film formed on a substrate. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber accommodating a substrate by a first gas discharge system connected to the first gas supply pipe; (b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and (c) supplying the first gas generated by the vaporizer to the process chamber accommodating the substrate via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before (a) is performed or after (b) is performed.
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: January 14, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Naofumi Ohashi, Shun Matsui
  • Patent number: 10529544
    Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: January 7, 2020
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventor: Peter Maschwitz
  • Patent number: 10526694
    Abstract: A method of preparing an ultra-flat metal surface involves providing a layer of a crystalline metallic material on an ultra-flat substrate surface that is relatively harder than the metallic material layer and then impinging the metallic material layer with incoming metal atoms that are deposited as an additive crystalline layer thereon, wherein at least a lattice constant of the additive crystalline layer is different enough from a lattice constant of the crystalline metallic material layer resulting in a reduction of roughness of the surface of the metallic material layer adjacent to the substrate surface. The metallic material layer having an ultra-flat surface then is separated by template stripping or other technique from the substrate surface for further use of the ultra-flat surface.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: January 7, 2020
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Martin Thuo, Jiahao Chen, Ian D. Tevis
  • Patent number: 10526697
    Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.
    Type: Grant
    Filed: February 28, 2016
    Date of Patent: January 7, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas H. Baum, Robert L. Wright, Jr., Scott L. Battle, John M. Cleary