Abstract: Method for the treatment of semiconductor substrates as well as an oven-boat system for this purpose. The oven is embodied as a vertical oven and it is aimed to simultaneously treat a number of substrates arranged one above the other in a boat. To carry out the deposition and such processes at raised temperatures an uniformly as possible, that is, so that each semiconductor substrate substantially undergoes the same treatment, it is proposed on the one hand to vary the ratio of the volume limited by two consecutive armrests and on the other hand the volume limited by screening off the process area and the edge of the substrates from the insertion end of the gas to the discharge end of the gas that flows through the oven.

Abstract: A fabrication equipment to form an opening plug is provided. The equipment at least includes a load/unload chamber, a degas chamber, an usual sputtering chamber, a radio frequency (RF) sputtering chamber, a physical vapor deposition (PVD) chamber, and a chemical vapor deposition (CVD). The load/unload chamber is used to load a substrate. The degas chamber is used to remove moisture on the substrate. The usual sputtering chamber is used to form an opening on the substrate. The PVD chamber is used to form a first glue layer. The RF sputtering chamber is used to remove an overhang structure on the first glue layer. The CVD chamber is used to form a second glue layer over the first glue layer.

Abstract: A plasma processing apparatus comprising a susceptor and a shadow frame in a processing chamber and used to process a substrate supported by a substrate support tray by using plasma discharge, the shadow frame being disposed so as to be movably by a guide mechanism provided on the inner wall of the processing chamber. The plasma processing apparatus, capable of carrying out high-speed processing, causes less trouble, requires less number of parts and has a high degree of flexibility in the layout of the processing chamber, while maintaining the advantages of a conventional plasma processing apparatus.

Abstract: A method and apparatus for depositing a halogen-doped oxide film having a low dielectric constant that is resistant to moisture absorption and outgassing of the halogen dopant, and that retains these qualities despite subsequent processing steps. The method begins by introducing process gases (including a halogen-containing source gas) into a processing chamber. A halogen-doped layer is then deposited. The combination of process gases is then changed and a sealing layer deposited which seals the dopant into the halogen-doped layer. The sealing layer may, for example, be a carbon-rich layer or an undoped layer. These steps are repeated until the film reaches a selected thickness.

Abstract: A plasma beam is directed towards a hearth to flow electric current of the plasma through the hearth during formation of a thin film on a substrate. The plasma beam is directed towards an auxiliary anode to flow electric current of the plasma through the auxiliary anode during the period after completion of the formation of the thin film on the substrate and before beginning of the formation of a thin film on the subsequent substrate.

Abstract: Provided is a gas recovery unit which is more efficient in its recovery and less expensive to run. The gas recovery unit comprises a CVD device, an exhaust gas recovery part and an exhaust gas purification part. The exhaust gas recovery part is constructed so as to have an inert gas reservoir part capable of accommodating liquid nitrogen, to have an exhaust gas supply part for supplying an exhaust gas to said inert gas reservoir part so that it can be brought in gasliquid contact with the liquid nitrogen, and to have a recovered and liquefied gas discharge part for discharging the recovered and liquefied gas which has been liquefied in the inert gas reservoir part.