Abstract: The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone.

Abstract: In a semiconductor processing apparatus, an external transfer mechanism transfers substrates between a cassette for storing a plurality of target substrates by vertically arranging the substrates at first intervals, and a processing section for performing semiconductor processing for the substrates. The external transfer mechanism has first and second arms defining first and second support surfaces each of which can support one of the substrates and capable of vertically moving relative to each other. An interval adjuster is disposed to adjust an interval in a vertical direction between the first and second support surfaces by moving the first and second arms relative to each other. An arm driving base is disposed to move the first and second arms between a position at which the first and second arms oppose the cassette and a position at which the first and second arms oppose the processing section.

Abstract: The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone.