Abstract: The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

Abstract: A non-volatile memory cell includes an upper electrode; a lower electrode and a state-variable region, in which a conductive state changes only once. The state variable region is formed in a region between the upper electrode and the lower electrode. The state-variable region comprises a first semiconductor layer of a first conductive type; and second semiconductor layers of a second conductive type, opposing to the first conductive type, which are formed on upper and lower surfaces of the first semiconductor layer via PN junctions.

Abstract: A light emitting device of the present invention includes an LED substrate and a sealing resin portion which seals the LED substrate, the sealing resin portion having a silicone resin having a refractive index n3 to which a fluorescent material having a refractive index n1 and fine particles having a refractive index n2 are added. In the light emitting device, a relationship of n2>n1>n3 holds in the refractive indexes n1 to n3, and a particle size of the fine particles is not more than 1/10 of a wavelength of light emitted from the LED substrate.

Abstract: A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.

Abstract: A method of manufacturing a thin film transistor is disclosed. The method includes forming an amorphous silicon layer and a blocking layer on an insulating substrate, forming a photoresist layer having first and second photoresist patterns on the blocking layer, etching the blocking layer using the first photoresist pattern as a mask to form first and second blocking patterns, reflowing the photoresist layer, forming a metal layer over the entire surface of the insulating substrate, removing the photoresist layer to expose the blocking layer and an offset region between the blocking layer and the metal layer, crystallizing the amorphous silicon layer to form a poly silicon layer having a MILC front, etching the polysilicon layer using the first and second blocking patterns as a mask to form first and second semiconductor layers and to remove the MILC front, and removing the first and second blocking patterns.

Abstract: A mounting method includes the steps of, after positioning objects being bonded relative to each other, moving a movable wall positioned there around until coming into contact with one object holding means to form a local chamber having a local enclosed space, enclosing both objects in the chamber, reducing the pressure in the chamber, moving the object holding means in a direction for reducing the volume of the chamber and moving the movable wall following the movement of the object holding means, and bonding both objects to each other by pressing. Since the bonding part and the vicinity of the bonding part can be locally and efficiently enclosed from the surroundings, and the local chamber can vary the shape of the enclosed space with the bonding operation while maintaining the enclosed state even at the time of bonding.