Abstract: A solid-state imaging device according to the present embodiment includes a semiconductor region and an antireflection film. In the semiconductor region, a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged. The antireflection film includes a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film. At least one of the first insulating film and the second insulating film has a film thickness in a region through which light received by the blue photodiode is transmitted thinner than a film thickness in a region through which light received by the green photodiode is transmitted.

Abstract: A semiconductor package may include an image sensor chip, a transparent substrate spaced apart from the image sensor chip, a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip, and a circuit substrate electrically connected to the image sensor chip. The image sensor chip may include a penetration electrode which penetrates at least a portion of an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is electrically connected to the penetration electrode. The joining structure may include a spacer and an adhesive layer. The joining structure may overlap the terminal pad. The spacer is between the transparent substrate and the terminal pad.

Abstract: In one example, a system for evaluating an agricultural material is provided. The system comprising: a housing having a passage in or through an interior of the housing with an inlet for receiving agricultural material and an outlet for outputting the agricultural material; a wall opening in a wall of the passage; and an imaging device having a window located within a border, the imaging device having a removable portion with at least one of a moisture absorbing material, a heat source, and an anti-fog agent within the removable portion.

Abstract: Distance measurement accuracy is improved.

Abstract: An optical fiber with one or more microgratings is disclosed. Methods and apparatus are described for making an optical fiber with one or more microgratings. Methods and apparatus are described for an optical fiber with one or more microgratings. Optical sensing methods and an optical sensing system effectively decouple strain range from the laser tuning range, permit the use of a smaller tuning range without sacrificing strain range, and compensate for ambiguity in phase measurements normally associated with smaller tuning ranges.

Abstract: An optical measurement system includes a light source configured to emit a first light pulse and a second light pulse toward a target, a detector, and a processing unit. The first light pulse has a first wavelength and the second light pulse has a second wavelength different from the first wavelength. The processing unit is configured to determine a plurality of temporal distributions of photons included in the first light pulse and the second light pulse and detected by the detector after the photons are scattered by the target, and determine, based on the plurality of temporal distributions and a source-detector distance estimation model, a distance between the light source and the detector.

Abstract: An electronic device is provided and includes an image sensor including a plurality of unit pixels including a first unit pixel and a second unit pixel, the first unit pixel including a first micro-lens, a first color filter disposed under the first micro-lens, and a first photodiode-array disposed under the first color filter and including a plurality of photodiodes arranged in a same number of columns and rows as each other, and the second unit pixel including a second micro-lens, a second color filter disposed under the second micro-lens and having a different color from that of the first color filter, and a second photodiode-array disposed under the second color filter and including a plurality of photodiodes arranged in a same number of columns and rows as each other; and a processor operatively coupled with the image sensor, wherein the processor is configured to identify a mode corresponding to an auto-focus function; if the mode is identified as a first mode, perform the auto-focus function based at l

Abstract: The present description concerns a pixel array comprising one or a plurality of pixels (PIX1). Each pixel comprises a first transistor having its control node coupled to a photodiode, a first main conduction node coupled to a first output voltage rail (VS), and a second main conduction node coupled to a second voltage rail (VCS). The array comprises a variable impedance (404) coupling the first voltage rail (VS) to a first power supply rail (VDD) and a current source (402) coupling the second voltage rail (VCS) to a second power supply rail (GND), the variable impedance (404) being controlled based on a voltage on the second voltage rail (VCS). The array comprises a first switch (4002) coupling the second voltage rail (VCS) to a third voltage rail (VINIT1).

Abstract: An optical sensor includes a support and a thermoelectric-conversion material section including first material layers, second material layers, and a third material layer. Each of the first material layers may have a first region including a first end portion and a second region including a second end portion. Each of the second material layers may have a third region including a third end portion and a fourth region including a fourth end portion. The first region and the second region are electrically connected to the third region and the fourth region, respectively, such that the plurality of first material layers and the plurality of second material layers are alternately connected in series to each other. The third material layer is disposed between the first region and the third region.

Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Abstract: A photon detection device including: a silicon photomultiplier (SiPM) configured to generate a detected signal when the SiPM absorbs a photon; an amplifier; and a transmission line stub between the SiPM and amplifier input. The SiPM connection is configured to transmit the detected signal to the amplifier and a transmission line stub is also configured to receive the SiPM signal and generate a time-delayed reflected signal back into the amplifier input; wherein the amplifier is configured to amplify a combination of the detected signal and the time-delayed reflected signal. The end of the transmission line stub is terminated with a complex impedance that can simultaneously absorb some components of the SiPM pulse response, and reflect others.

Abstract: An imaging apparatus according to the present technology includes an imaging element including a light shielding pixel and a photodiode division pixel, and a defocus amount calculation unit that calculates a defocus amount using at least one of an output signal of the light shielding pixel and an output signal of the photodiode division pixel on the basis of an exposure amount.

Abstract: An afocal sensor assembly detects a light beam with an aberrated wavefront. The afocal sensor assembly is configured to provide sorted four-dimensional (4D) light field information regarding the light beam, for example, via one or more plenoptic images. Based on the 4D light field information, a lossy reconstruction of an aberrated wavefront for one or more actuators of an adaptive optics (AO) device is performed. The AO device can be controlled based on the lossy reconstruction to correct the wavefront of the light beam. In some embodiments, the aberrated wavefront is due to passage of the light beam through atmospheric turbulence, and the lossy reconstruction and correction using the AO device is performed in less than 1.0 ms. The lossy reconstruction of the aberrated wavefront can have a phase accuracy in a range of ?/2 to ?/30.

Abstract: Image intensifier systems incorporating a microchannel plate (MCP) and methods for producing the same are disclosed. In some examples, a device is disclosed that includes a first substrate having a radiation-receiving first surface and an opposed second surface through which electromagnetic radiation is transmitted. A second substrate is coupled to the first substrate to define a vacuum cavity therebetween. An electron-emitting photocathode is disposed within the vacuum cavity for generating electrons from electromagnetic radiation transmitted through the second surface. A microchannel plate is disposed within the vacuum cavity and defines microchannels extending from an input end to an output end. Each of the microchannels is configured to generate electrons in response to an electron generated by the photocathode being received through the input end of the respective microchannel.

Abstract: A presence detection system includes a presence detection field of an amusement park attraction, multiple transmitters, multiple receivers, and a controller. The multiple transmitters send multiple light beams of multiple wavelengths and the multiple receivers receive the multiple light beams of the multiple wavelengths. The controller receives input from the multiple transmitters and receivers and determines presence of an object in the presence detection field based on an interruption of the multiple light beams as indicated by the input. The controller also determines reflected light beams of the multiple wavelengths, absorbed light beams of the multiple wavelengths, or both, based on the input. The controller determines the object as a known object or an unknown object based at least in part on the reflected light beams, the absorbed light beams, or both.

Abstract: An integrated circuit (IC) device includes a controller circuitry having an input connected to a photodiode of an optoelectronic circuitry and an output connected to a biasing circuitry, the biasing circuitry having an input connected to the output of the controller circuitry, the controller circuitry configured to transmit a transimpedance control signal code to the biasing circuitry configured to cause the biasing circuitry to offset a DC current component of the output of the photodiode.

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays.

Abstract: An image sensor includes: a sensor substrate including a plurality of first pixels configured to sense light of a first wavelength and a plurality of second pixels configured to sense light of a second wavelength; and an anti-reflection element provided on the sensor substrate, wherein the anti-reflection element includes a plurality of low-refractive index patterns and a high-refractive index layer provided between the plurality of low-refractive index patterns and the sensor substrate.

Abstract: An apparatus is disclosed herein. The apparatus comprises a non-linear photonic element for outputting a signal and idler photon pair. The apparatus further comprises a module configured to, based on receiving one or more control signals, controllably store photons and controllably output stored photons. The apparatus further comprises a detector arrangement comprising one or more detectors for detecting light. The module is further configured to receive at least one of the signal and idler photons of the pair. The module is further configured to at least partially store one of the signal or idler photons of the pair. The module is further configured to output the said at least partially stored signal or idler photon along an optical path towards the at least one detectors. The apparatus is configured to direct the other of the signal or idler photon towards the detector arrangement.

Abstract: Provided is an image sensor including a sensor chip including a first substrate and a first interconnection layer, a logic chip including a second substrate and a second interconnection layer, a through-hole penetrating a portion of the second interconnection layer, the first substrate, and the first interconnection layer, and a first connection structure disposed on an inner surface of the through-hole and extending from the first substrate toward the second interconnection layer, wherein the first interconnection layer includes a first interlayer insulating layer and a first interconnection pattern, the second interconnection layer includes a second interlayer insulating layer and a second interconnection pattern, the through-hole includes first and second trenches respectively extending from the through-hole toward the second interconnection layer, bottom surfaces of the first and second trenches contact the second interconnection pattern, and a bottom surface of the through-hole contacts the first interco