Abstract: An embodiment of the present invention is a method of manufacturing a perpendicular MTJ device which includes: a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and a second stacked structure including a multilayer, the method comprising the steps of: forming one of the first and second stacked structures on a substrate; inspecting a property of the substrate with the one of the first and second stacked structures formed thereon while exposing the substrate to the atmosphere; and forming another one of the first and second stacked structures on the substrate with the one of the first and second stacked structures formed thereon.

Abstract: An integrated circuit is formed in a semiconductor substrate. The integrated circuit includes a trench formed in a first main surface of the semiconductor substrate. The trench includes a first trench portion and a second trench portion. The first trench portion is connected with the second trench portion. Openings of the first and second trench portions are adjacent to the first main surface. The integrated circuit further includes a trench transistor structure including a gate electrode disposed in the first trench portion, and a trench capacitor structure including a capacitor dielectric and a first capacitor electrode. The capacitor dielectric and the first capacitor electrode are disposed in the second trench portion. The first capacitor electrode includes a layer conformal with a sidewall of the second trench portion.