Abstract: Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition.
Type:
Grant
Filed:
December 28, 1988
Date of Patent:
April 17, 1990
Assignee:
American Telephone and Telegraph Company,AT&T Bell Laboratories
Inventors:
Daniel L. Flamm, Dale E. Ibbotson, Wayne L. Johnson