Patents Examined by Faird Khan
  • Strained semiconductor device with recessed channel
    Patent number: 8368147
    Abstract: A semiconductor device having a strained channel and a method of manufacture thereof is provided. The semiconductor device has a gate electrode formed over a channel recess. A first recess and a second recess formed on opposing sides of the gate electrode are filled with a stress-inducing material. The stress-inducing material extends into an area wherein source/drain extensions overlap an edge of the gate electrode. In an embodiment, sidewalls of the channel recess and/or the first and second recesses may be along {111} facet planes.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: February 5, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Fai Cheng, Ka-Hing Fung, Han-Ting Tsai, Ming-Huan Tsai, Wei-Han Fan, Hsueh-Chang Sung, Haiting Wang, Wei-Yuan Lu, Hsien-Ching Lo, Kuan-Chung Chen