Abstract: A method of fabricating bulk superconducting material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta. comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta. in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa.sub.2 Cu.sub.3 O.sub.7-.delta. while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta.. R is a rare earth or Y or La and the single crystal seed has a lattice mismatch with RBa.sub.2 Cu.sub.3 O.sub.7-.delta. of less than about 2% at the growth temperature. The starting material may be such that the final product contains a minor amount of R.sub.2 BaCuO.sub.5.

Abstract: The present invention relates to a method of producing a semiconductor substrate which is suitable for an electronic device or an integrated circuit in the form of dielectric separation or having a single crystal semiconductor layer formed on an insulator.The method comprises the steps of making a silicon substrate porous, forming a silicon single crystal on the porous substrate and oxidizing the porous silicon substrate to form a semiconductor layer having good crystallinity on an insulating support, particularly a support having light transmission.

Abstract: A flux process is disclosed for producing a single orthorhombic crystal of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 mm, and wherein the product at the dimensions along the three axes is at least about 15 mm.sup.3. The process involves preparing a homogeneous melt containing the components for forming said crystal and a flux comprising oxides of Cs and As at a temperature no higher than the decomposition temperature of said orthorhombic crystal, the mole fraction of M relative to the total Cs+M in the melt being within the range of from 0 to about 0.2; introducing a seed crystal for said single crystal in the melt; activating the controlled crystallization on the seed crystal; and continuing the crystallization until formation of the single crystal is completed. Single crystals of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (including crystals at least about 5 mm.times.5 mm 5 mm) are also disclosed.

Abstract: A process is provided for the separation of substances by melt crystallization. The organic mixtures which are difficult to crystallize are heated to a temperature sufficient to obtain a melt with the melt then being moved through a three-dimensional crystallization matrix having a large specific area. The melt is slowly cooled over a temperature range so as to achieve a selective crystallization from the supersaturated melt in the carrier matrix. A deposited crystal phase is thereafter melted and separated from the carrier matrix and removed by centrifugation. The carrier matrix may have a crystallization-promoting microstructure surface and may consist of an openpored foam.

Abstract: Floating zone refining or crystal growth is carried out by providing rapid relative rotation of a feed rod and finish rod while providing heat to the junction between the two rods so that significant forced convection occurs in the melt zone between the two rods. The forced convection distributes heat in the melt zone to allow the rods to be melted through with a much shorter melt zone length than possible utilizing conventional floating zone processes. One of the rods can be rotated with respect to the other, or both rods can be counter-rotated, with typical relative rotational speeds of the rods ranging from 200 revolutions per minute (RPM) to 400 RPM or greater. Zone refining or crystal growth is carried out by traversing the melt zone through the feed rod.

Abstract: Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T.sub.B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation .DELTA.D is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature.