Abstract: A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.

Abstract: A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.

Abstract: This invention relates to the apparatus and the process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The apparatus is provided with a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a cylindrical shaped heat resistant and heat insulating component below the protective gas inlet pipe noted above.

Abstract: The invention defines an apparatus for controlling oxygen content in Czochralski silicon crystal pullers in which silicon is melted in a quartz crucible. The apparatus includes a susceptor 10, a quartz crucible 12 in said susceptor, a cable 16 for lowering a seed crystal 14 into silicon melted in said crucible, and a combination spiral heater/magnetic coil 25 for heating and melting silicon in said crucible, and for producing a magnetic field around the crucible.

Abstract: An apparatus for growing hollow crystalline bodies by the EFG process, comprising an EFG die having a top surface shaped for growing a hollow crystalline body having a cross-sectional configuration in the shape of a polygon having n faces, and a radiation shield adjacent to and surrounded by the top end surface of the die, characterized in that the shield has an inner edge defining a similar polygon with n sides, and the inner edge of the shield is notched so that the spacing between the n faces and the n sides is greatest between the central portions of the n faces and the n sides, whereby the greater spacing at the central portions helps to reduce lateral temperature gradients in the crystalline body that is grown by use of the die.

Abstract: A method and apparatus in Molecular Beam Epitaxy (MBE) in order to grow thin films. The substrate is attached to the rotatable manipulator and its normal will be aligned parallel to the rotation axis in vacuum for providing a real time information on the growth parameters by ellipsometry. The apparatus includes a rotatable manipulator head where the substrate is attached to, and aligning elements to align the substrate normal sufficiently parallel to the rotation axis of the manipulator in vacuum.

Abstract: A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.

Abstract: A method for fabricating semiconductor substrates with resistivity below 0.02 ohm-cm is provided. This low resistivity is achieved by doping a silicon melt with a phosphorus concentrations above 1.times.10.sup.18. The silicon melt is also doped with a germanium concentration that is 1.5 to 2.5 times that of the phosphorus concentration and a stress and dislocation free crystalline boule is grown. Phosphorus in high concentrations will induce stress in the crystal lattice due to the difference in the atomic radius of silicon atoms versus phosphorus atoms. Germanium compensates for the atomic radius mismatch and also retards the diffusion of the phosphorus as the diffusion coefficient remains relatively constant with a doping of 1.times.10.sup.18 to 1.times.10.sup.21 atoms per cm.sup.3. This will retard phosphorus from diffusing into an overlying epitaxial layer and retard other layers formed on the substrate from being auto-doped.

Abstract: When producing a single-crystal bulk ZnSe from a melt by a high-pressure melt technique in a vertical Bridgman (VB) furnace or a vertical gradient freezing (VGF) furnace, preliminarily grown polycrystalline ZnSe (which may be a crystal solely composed of twins) is used as a seed and, after melting the starting ZnSe material and part of the seed, a twin-free ZnSe bulk crystal is grown on the seed; alternatively, polycrystalline ZnSe is grown at the tip of the growing crystal and part of it is melted, followed by growing a single crystal on that polycrystal to produce a twin-free, high-purity ZnSe bulk crystal. In either way, the process assures that twin-free single crystals of bulk ZnSe can be produced with good reproducibility without adding dopants or using any materials that are difficult to obtain.

Abstract: An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.

Abstract: An improved susceptor for a crucible/die assembly for growing tubular crystalline structures by the EFG process is provided. The crucible/die assembly comprises a die having a substantially polygonally-shaped top end surface for supporting a film of silicon feed material that is replenished from a melt in the crucible through capillary action. A hollow crystalline body is grown from the film of silicon material on the top end surface of the die. The heat susceptor is made of graphite or similar material, and has a peripheral configuration similar to that of the die. Further, the upper surface of the heat susceptor has a central land and a plurality of circumferentially-spaced upwardly extending projections.

Abstract: A biological macromolecular substances crystallization apparatus comprises a plate-like base, a lid having a concavity which defines an experimental vessel for crystallizing biological macromolecular substances when the lid is put on the base, a groove formed in the base of the experimental vessel for holding a first specimen solution for crystallizing biological macromolecular substances, a trench-like groove formed in the base of the experimental vessel for holding a second specimen solution for crystallizing biological macromolecular substances, tight sealing means for tightly closing the experimental vessel, a plug which is provided in the concavity in the lid, and which is pressed to cover said grooves and to separate said groove from said trench-like groove, and a valve which is provided in the concavity in the lid, and which equalizes an internal pressure in the experimental vessel to an external pressure.

Abstract: A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.

Abstract: A method for producing a single crystal, which comprises (1) placing a metal layer as a pattern at a desired position on the surface of a single crystal substrate, (2) etching the surface of the single crystal substrate around the pattern, and (3) in a raw material gas atmosphere containing an element or elements constituting the single crystal, taking the element or elements in the metal layer at the pattern and permitting a needle-like single crystal to grow perpendicularly.

Abstract: A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a concentration of from 0.01 to 0.1 ppm; annealing the CdHgTe layer to produce a p-type CdHgTe layer including indium as an n-type background dopant impurity; forming an n-type region of a desired depth as a light receiving region at the surface of the p-type CdHgTe layer by implanting a dopant impurity producing n-type conductivity and annealing; and forming an n-side electrode on the n-type region and a p-side electrode a prescribed distance from the n-type region on the p-type CdHgTe layer.

Abstract: The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.

Abstract: Preferred embodiments mask select regions of a circuit surface (141) prior to abrading the surface with diamond particles to form nucleation sites (200). The mask (150) is then removed prior to forming a diamond layer (160). Diamond layer (160) grows on the surface except in those regions wherein the mask (150) prevented the formation of nucleation sites (200).

Abstract: An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.