Patents Examined by Felisa Garrett-Meza
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Patent number: 5098655Abstract: The electrical contact alloy is provided comprising Sb and either Au or Ag or both. In such alloys, Sb produces a non-catalytic effect to inhibit formation of carbon from organic gases derived from resin parts. Therefore, when electrical contacts of such alloys are assembled with resin parts into housings, poor contact due to carbon deposition is prevented to increase the useful life and reliability of the electrical contacts.Type: GrantFiled: May 26, 1989Date of Patent: March 24, 1992Assignee: Omron Tateisi Electronics Co.Inventor: Masatoshi Ohba
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Patent number: 5069743Abstract: A process is provided for the controlled growth of titanium carbide. Essentially, relatively fast, or low temperature growth, favors growth of single crystals having (100) orientation, while relatively slow, or high temperature growth, favors single crystals having (111) orientation. The process obviates the need for any seed crystals and permits growth of rods having diameters exceeding 1 cm.Type: GrantFiled: April 11, 1990Date of Patent: December 3, 1991Assignee: Hughes Aircraft CompanyInventors: Joseph A. Wysocki, Frans G. Krajenbrink
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Patent number: 5047112Abstract: A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.Type: GrantFiled: August 14, 1990Date of Patent: September 10, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventor: Theodore F. Ciszek
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Patent number: 5041160Abstract: A novel alloy for use in lead refining is disclosed comprised substantially of magnesium and calcium. The preferred ratio on a weight basis of magnesium to calcium is between about 1.2:1 to about 5.2:1. A method of refining a lead bath with the novel alloy is disclosed which provides a high recovery ratio of impurities present therein.Type: GrantFiled: December 5, 1989Date of Patent: August 20, 1991Assignee: Timminco LimitedInventors: Douglas J. Zuliani, Bernard Closset
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Patent number: 5037622Abstract: A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die.Type: GrantFiled: July 13, 1990Date of Patent: August 6, 1991Assignee: Mobil Solar Energy CorporationInventors: David S. Harvey, Dana L. Winchester, Brian H. Mackintosh, Sankerlingam Rajendran
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Patent number: 5032366Abstract: A pyrolytic boron nitride boat having a cavity suitable for use in growing and doping semi-conductor crystals such as gallium arsenide and said cavity having a roughened surface formed of substantially uniform projected nodules, disturbances, or ridges.Type: GrantFiled: April 30, 1990Date of Patent: July 16, 1991Assignee: Union Carbide Coatings Service Technology CorporationInventor: Robert L. Finicle
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Patent number: 5017218Abstract: Method and apparatus for the production of metal granules from a molten metal are disclosed. A molten metal stream is directed against an impact element located above the surface of water in a water tank. The impact of the molten metal upon the impact element causes the molten metal to disintegrate into drops which spread out radially from the impact element. The drops fall down into the water below the impact element in an annular region a certain radial distance from the impact element. The radial distance is varied by varying the velocity of the molten metal stream relative to the impact element at the instant of impact, and/or by varying the height of the impact element above the water surface, in order to substantially continuously vary the radius of the annular region in which the molten metal drops hit the water surface.By using the method and apparatus of the present invention it is possible to granulate metals and metal alloys having a low sinking rate in water and a high enthalpy.Type: GrantFiled: June 12, 1989Date of Patent: May 21, 1991Assignee: Uddholm Tooling AktiebolagInventors: Per-.ANG.ke Lundstrom, Gunnar A. Andersson, .ANG.ke West, Juhan Magi
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Patent number: 5013531Abstract: A macromolecular crystal growing system especially designed for growing crystals in the low gravity of space as well as the gravity of earth includes at least one tray assembly, a carrier assembly which receives the tray, and a refrigeration-incubation module in which the carrier assembly is received. The tray assembly includes a plurality of sealed chambers with a plastic syringe and a plug means for the double tip of the syringe provided therein. Ganging mechanisms operate the syringes and plugs simultaneously in a precise and smooth operation. Preferably, the tray assemblies are mounted on ball bearing slides for smooth operation in inserting and removing the tray assemblies into the carrier assembly. The plugging mechanism also includes a loading control mechanism. A mechanism for leaving a syringe unplugged is also provided.Type: GrantFiled: August 31, 1990Date of Patent: May 7, 1991Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Robert S. Snyder, Blair J. Herren, Daniel C. Carter, Vaughn H. Yost, Charles E. Bugg, Lawrence J. DeLucas, Fred L. Suddath
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Patent number: 5009862Abstract: An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure.Type: GrantFiled: May 23, 1990Date of Patent: April 23, 1991Assignee: Mitsubishi Kinzoku Kabushiki KaishaInventors: Michio Kida, Yoshiaki Arai, Kensho Sahira
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Patent number: 5006317Abstract: Crystalline silicon ingots are produced directly from an internally heated bed of silicon particles.Type: GrantFiled: May 18, 1990Date of Patent: April 9, 1991Assignee: CommTech Development Partners IIInventor: Angel Sanjurjo
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Patent number: 4999051Abstract: A system and method for atomizing a titanium-based material to particulates in a controlled atmosphere. The system includes a crucible for skull melting a titanium-based material. The molten titanium-based material is transferred to a tundish for receiving the molten titanium-based material. The tundish has a bottom portion with an aperture formed therein and is heated. A molten metal nozzle for forming the molten titanium-based material into a free-falling stream exiting from the tundish is provided, the molten metal nozzle being coaxially aligned with the aperture of the tundish. A baffle may be disposed in the tundish for stabilizing the free-falling stream of the molten titanium-based material. The molten titanium-based material is atomized by impinging the free-falling stream of the molten titanium-based material with an inert gas jet issuing from a gas nozzle.Type: GrantFiled: September 27, 1989Date of Patent: March 12, 1991Assignee: Crucible Materials CorporationInventors: Charles F. Yolton, Thomas Lizzi, John H. Moll