Patents Examined by Felisa Hitesherw
  • Catalyst-free growth of single-wall carbon nanotubes
    Patent number: 6843850
    Abstract: A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: January 18, 2005
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Vincent Derycke, Richard Martel, Marko Radosavljevic