Patents Examined by Fetum Abraham
  • Semiconductor device
    Patent number: 6956235
    Abstract: The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity.
    Type: Grant
    Filed: April 29, 2004
    Date of Patent: October 18, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Mitsuki, Kenji Kasahara, Taketomi Asami, Tamae Takano, Takeshi Shichi, Chiho Kokubo