Abstract: A scintillator includes a Group III nitride compound semiconductor layer that emits fluorescent light when radiated by, for example, a CU-K?-ray source, an X-ray source, or a ?-ray source, and a scintillation counter including a scintillator having a Group III nitride compound semiconductor.

Abstract: A UV detector has a UV detection thin film of coated spherical silicon nanoparticles formed upon a substrate. The detector includes structures to bias the thin film. In preferred embodiments, a thin conductor that is at least semi-transparent to UV radiation is formed over the thin film. In preferred embodiments, the UV detector is formed as a silicon based integration, upon a device quality silicon wafer.

Abstract: The invention relates to a gas cell (2?) that includes a cavity (20) for a chosen gas volume, a light source (30), and one or more light bundle receiving units or detectors (21, 22, 23, 24, 25). The cavity (20) is formed by and delimited by, inter alia, a first partially elliptical mirror surface (20a) and two partially elliptical mirror surfaces, a second (20b) and a third (20c), which are opposed to said first mirror surface (20a) and which are so orientated in relation to each other that a light bundle (130a, 130b) will be reflected by said mirror surfaces (20a, 20b, 20c) so as to form an optical measurement path extremity, and terminate in a light-receiving unit (21, 22, 23, 24, 25) allocated to a chosen measurement path extremity. The light source (30) is disposed in one end region of said cavity (20) and a reflector (30a, 30b) which functions to cause emitted light bundles to converge towards a focusing point (F) is also disposed in said one end region.