Abstract: Memory interface systems include one or more channel lines that couple a memory to a memory controller such that the channel line(s) are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller. Because the memory interface system uses a terminal voltage that is independent of the supply voltages of the memory and the memory controller, the interface system may be unaffected by voltage differences between the memory supply voltage and the memory controller supply voltage.
Type:
Grant
Filed:
May 8, 2001
Date of Patent:
February 19, 2008
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Tae-sung Jung, Byung-se So, Myun-joo Park