Patents Examined by G. Lee, Jr.
  • Patent number: 6281024
    Abstract: A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: August 28, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Yasuhiro Yoshitake, Kenji Watanabe, Yoshimasa Fukushima, Minori Noguchi