Abstract: A display apparatus including a pixel. The pixel includes a capacitor connected to a first voltage line, a light emitting element connected to a second voltage line, a first transistor including a first gate electrode connected to the capacitor, a second transistor connected to a data line and including a second gate electrode connected to the first scan line, a third transistor including a third gate electrode connected to a second scan line, and a fourth transistor including a fourth gate electrode connected to a third scan line, wherein at least one of the third transistor or the fourth transistor includes a plurality of active areas spaced apart from each other with a common conductive area therebetween, wherein at least one of the third gate electrode or the fourth gate electrode overlaps each of the common conductive area and the plurality of active areas in a plan view.

Abstract: The invention relates to a microelectromechanical drive for moving an object, having electrostatic bending actuators, wherein each electrostatic bending actuator has a cantilever having at least one active element which has a layer stack forming at least one capacitor positioned offset to a center-of-gravity-plane of the cantilever which leads alongside a longitudinal axis of the cantilever from a supported end of the cantilever to a loose end, which is averted from the supported end of the cantilever and which has a contact area for engaging with the object. The microelectromechanical drive can be used to displace any target objects from nanoscopic to macroscopic sizes that are within the force-displacement configurations of the electrostatic bending actuators. The microelectromechanical drive is suited to act as an inchworm drive.

Abstract: A display device includes: a substrate including: a first area; a second area at least partially surrounding the first area; and a third area at least partially surrounding the second area; first display elements at the first area, each of the first display elements including a first pixel electrode; second display elements at the first area, each of the second display elements including a second pixel electrode; third display elements at the first area, each of the third display elements including a third pixel electrode; and a first connection line electrically connecting the first display elements to each other. The first connection line overlaps with at least a portion of the second pixel electrode, and at least a portion of the third pixel electrode.

Abstract: A display apparatus includes first to third light-emitting elements disposed on a substrate, a first-color light output layer, a second-color quantum dot layer, and a third-color quantum dot layer, which are disposed on the first to third light-emitting elements, respectively, a first capping layer disposed on the first-color light output layer, the second-color quantum dot layer, and the third-color quantum dot layer to correspond to the first to third light-emitting elements, a low-refractive-index layer disposed on the first capping layer, a first barrier layer between the first capping layer and the low-refractive-index layer, a first-color color filter layer disposed on the low-refractive-index layer to correspond to the first light-emitting element, a second-color color filter layer disposed on the low-refractive-index layer to correspond to the second light-emitting element, and a third-color color filter layer disposed on the low-refractive-index layer to correspond to the third light-emitting element

Abstract: A display device includes a display module including a plurality of pixel regions and a boundary region. The display module includes a plurality of inorganic layers, in which an opening corresponding to the boundary region is defined, an inorganic pattern disposed in the opening and covering a region exposed by the opening, and an organic layer disposed in the opening and contacting the inorganic pattern and an uppermost one of the inorganic layers.

Abstract: A display device includes a thin-film transistor, an interlayer insulating layer on the thin-film transistor, a source electrode, a drain electrode, and an auxiliary electrode on the interlayer insulating layer, each of the source electrode, the drain electrode, and the auxiliary electrode including a main conductive layer and a sub conductive layer on the main conductive layer, and a via insulating layer on the source electrode, the drain electrode and the auxiliary electrode, the via insulating layer covering the source electrode and the drain electrode and exposing a portion of an upper surface of the second conductive layer of the auxiliary electrode. The via insulating layer includes a first part spaced apart from the upper surface of the second conductive layer of the auxiliary electrode, and the second part adjacent to side surfaces of the main conductive layer and the sub conductive layer of the auxiliary electrode.

Abstract: A display panel and a display apparatus. The display panel includes: a substrate including a first non-display area and a display area arranged around the first non-display area; and a plurality of pixel circuits arranged in a plurality of rows in the display area, each row of the pixel circuits includes a plurality of pixel circuits arranged in the first direction, the plurality of rows of the pixel circuits are arranged in the second direction, the second direction intersects the first direction, each of the pixel circuits includes a semiconductor layer for forming an active layer of a transistor, in which the semiconductor layers of adjacent ones of the pixel circuits are spaced apart from each other.

Abstract: A display panel includes: a first pixel connected to a reference line, a scan line, a sensing line, a first power line, a first data line, and a second power line. The first pixel includes a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitor. The light-emitting element includes a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The second power line includes a first line and a second line overlapping with the first line, the first line being located on an insulating layer on which the first data line is located, and the second line being located on an insulating layer different from the insulating layer on which the first line is located. The first line is spaced from the first data line, and the second line overlaps with the first data line.

Abstract: Light-emitting diode (LED) packages, and more particularly arrangements of multiple LED chips in LED packages are disclosed. Arrangements include different types, different dimensions, and/or different orientations of LED chips within LED packages and corresponding electrical connections. Further arrangements include individual cover structures having different dimensions for various LED chips to accommodate thickness variations of LED chips and/or thickness variations attributed to different elements of individual cover structures. Different cover structure elements may include lumiphoric materials, antireflective layers, filter layers, and polarization layers. By accounting for dimensional variations between LED chips and/or between cover structures within multiple-chip LED packages, aggregate light-emitting surfaces may be provided with improved emission uniformity.

Abstract: An electroluminescent display device can include a substrate including an active area and a non-active area having a gate in panel (GIP) area, a thin film transistor disposed on the substrate, a GIP circuit unit disposed on the substrate in the GIP area, a sacrificial layer disposed on the GIP circuit unit, a planarization layer disposed over the thin film transistor and the sacrificial layer, an anode disposed on the planarization layer, a bank disposed on the planarization layer and exposing a portion of the anode, a light emitting unit and a cathode disposed on the anode and the bank, a trench pattern disposed on the sacrificial layer, and a buffer layer disposed on the cathode and an inner surface of the trench pattern. As a result, reliability of the display panel can be improved by preventing diffusion of residual foreign materials and moisture permeation.

Abstract: A display apparatus includes a first capacitor electrode, a second capacitor electrode over the first capacitor electrode and overlapping the first capacitor electrode, a power voltage line over the second capacitor electrode and electrically connected to the second capacitor electrode, a connection electrode at a same layer as the power voltage line, the connection electrode being electrically connected to the first capacitor electrode, and a pixel electrode over the connection electrode and electrically connected to the connection electrode. A high-quality image may be displayed on the display apparatus.

Abstract: A light-emitting substrate includes: a substrate; and at least one coupling portion and at least one auxiliary cathode pattern disposed on the substrate. Each auxiliary cathode region is provided with a coupling portion and an auxiliary cathode pattern coupled to the coupling portion. The auxiliary cathode pattern includes at least one disconnection portion, and each disconnection portion includes first, second and third conductive pattern layers. An orthographic projection of an edge of the second conductive pattern layer on the substrate is located within orthographic projections of edges of the third and first conductive pattern layers on the substrate. A total perimeter of at least one orthographic projection, on the substrate, of at least one edge of at least one third conductive pattern layer in the at least one disconnection portion is greater than a perimeter of an orthographic projection of an edge of the auxiliary cathode region on the substrate.

Abstract: A TFT layer is provided that includes a stack of, in sequence, display wires, a protective film, a first flattening film, a metal wire layer and a second flattening film; further, a frame region has a first trench and a second trench respectively provided in the first flattening film and the second flattening film and overlapping the display wires; further, a second electrode is provided to cover the first trench and the second trench; further the protective film includes a first protective film and a third protective film formed of a silicon oxide film, and a second protective film formed of a silicon nitride film.

Abstract: A display device includes a substrate including an active area and a non-active area which is disposed at an outer periphery of the active area, the non-active area including a pad unit in which a plurality of pad electrodes are disposed and a non-pad unit excluding the pad unit, an insulating layer on the substrate, a pixel unit on the insulating layer, an encapsulation unit on the pixel unit, a film member below the substrate and protruding outwardly from the substrate, an organic pattern at an edge of the film member protruding outwardly from the substrate, an anisotropic conductive film on the pad electrodes, a side surface of the insulating layer, and a side surface of the substrate and a flexible film that is on the plurality of pad electrodes to be electrically connected to the pad electrodes by the anisotropic conductive film.

Abstract: The present disclosure relates to a thin film transistor and a manufacturing method thereof, and the thin film transistor according to an embodiment includes: a substrate; a buffer layer positioned on the substrate and defining a trench on an upper surface thereof; a semiconductor positioned in the trench of the buffer layer; a gate electrode overlapping the semiconductor in a plan view; and a source electrode and a drain electrode, which are connected to the semiconductor.

Abstract: A method of manufacturing a metal structure for an optical semiconductor device, including a treatment step (1) of immersing in and/or applying the solution containing a polyallylamine polymer a base body, the base body including an outermost layer at a portion or entire surfaces of the base body, the outermost layer including a plating of at least one selected from the group consisting of gold, silver, a gold alloy, and a silver alloy, so as to manufacture the metal structure for an optical semiconductor device having an increased adhesion to a resin material.

Abstract: An OLED display panel includes a base substrate and an OLED device on the base substrate. The OLED device includes: an auxiliary electrode in the non-light-emitting region, the auxiliary electrode includes a conductive layer and a conductive column on a side of the conductive layer away from the base substrate, and an orthographic projection of the conductive column on the base substrate is within an orthographic projection of the conductive layer on the base substrate; and an insulating layer between the conductive layer and the base substrate; a groove is arranged on a surface of the insulating layer away from the base substrate, and an orthographic projection of the groove on the base substrate at least partially overlaps with the orthographic projection of the isolation structure on the base substrate.

Abstract: Provided are a display substrate, a testing method therefor and a preparation method therefor, and a display panel, which are used for improving the success rate of transistor testing. The display substrate comprises a base substrate and a pixel circuit, wherein the pixel circuit comprises an active layer, a first gate insulating layer, a first gate electrode layer, a second gate insulating layer, a second gate electrode layer, a first interlayer insulating layer, a source/drain electrode layer, and a second interlayer insulating layer. The pixel circuit is divided into a plurality of transistors, and further comprises a gate electrode contact hole and a source/drain electrode contact hole.

Abstract: A display device includes a substrate, an active pattern disposed on the substrate, and including a first area, a second area, a (1-1)th channel area, a (1-2)th channel area, and a third area disposed between the (1-1)th channel area and the (1-2)th channel area, a first insulating layer disposed on the substrate and covering the active pattern, a second insulating layer which is disposed on the first insulating layer and in which an opening overlapping the (1-2)th channel area, the second area, and the third area is defined, a first gate electrode disposed on the first insulating layer and overlapping the (1-1)th channel area the (1-2)th channel area, respectively, and a high dielectric layer disposed on the first insulating layer and the second insulating layer, covering the first gate electrode, and filling the opening.

Abstract: A display panel and a display device. The display panel includes: an array substrate; a light-emitting layer which is provided on the array substrate; and a encapsulation layer which covers the light-emitting layer. The encapsulation layer includes at least one inorganic film layer and at least one organic film layer which are stacked and alternately arranged, and the at least one inorganic film layer includes a first region and a second region arranged around the first region, the first region of the at least one inorganic film layer located between the light-emitting layer and the organic film layer has a surface energy greater than the second region, and the organic film layer is stacked over the first region.