Patents Examined by George C. Ekert II
  • Capacitor structure of semiconductor memory cell and method for fabricating capacitor structure of semiconductor memory cell
    Patent number: 5998825
    Abstract: A capacitor structure in a semiconductor memory cell includes a lower electrode formed on a base body, a capacitor insulation film which is a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor insulation film. The lower electrode is shaped semi-spherical. The capacitor structure has an increased area of the upper electrode in contact with the ferroelectric thin film, local concentration of an electric field in the ferroelectric thin film is unlikely to occur.
    Type: Grant
    Filed: October 17, 1997
    Date of Patent: December 7, 1999
    Assignee: Sony Corporation
    Inventor: Akihiko Ochiai