Abstract: An electronic device and a method for detecting an intensity of ambient light are provided. The method includes: sensing a light intensity of incident light, wherein the incident light includes ambient light passed through the display screen and light leaked from the display screen; obtaining an estimated light intensity of the light leaked from the display screen based on display data of a target region of the display screen; computing based on the estimated light intensity and a temperature compensation coefficient corresponding to a current temperature of the display screen, to obtain a light intensity of the light leaked from the display screen; and obtaining a light intensity of the ambient light passed through the display screen based on the light intensity of the incident light and the light intensity of the light leaked from the display screen.

Abstract: A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.

Abstract: An optical filter, a sensor device including the optical filter, and a method of fabricating the optical filter are provided. The optical filter includes one or more dielectric layers and one or more metal layers stacked in alternation. The metal layers are intrinsically protected by the dielectric layers. In particular, the metal layers have tapered edges that are protectively covered by one or more of the dielectric layers.

Abstract: An imaging system includes: an optical system configured to form a subject image; a driver configured to drive the optical system; an imaging element configured to capture the subject image and generate image data; and a processor configured to control the imaging element and the driver. The imaging element includes: a first imaging portion configured to capture an image of a first light beam that travels through a first optical path in the optical system; a second imaging portion configured to capture an image of a second light beam that travels through a second optical path shorter than the first optical path; and plural phase difference pixels for phase difference autofocus, the plural phase difference pixels being arranged in at least one of the first imaging portion and the second imaging portion, the plural phase difference pixels being configured to output phase difference signals.

Abstract: An integrated circuit (IC) device includes a controller circuitry having an input coupled to a photodiode of an optoelectronic circuitry and an output coupled to a heater of the optoelectronic circuitry, the controller circuitry configured to determine a center frequency of the optoelectronic circuitry based on a shape of an input signal received from the photodiode, and provide a heater signal to the heater based on the shape of the input signal and the center frequency of the optoelectronic circuitry.

Abstract: An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

Abstract: A dynamic concentrator system having a concentrator lens, a tracker platform and a receiver. In an embodiment, the concentrator lens is configured to receive an incoming light at an entrance angle ? and concentrate the light beam on a focus spot. The tracker platform has a detector optical aperture and one or more actuators. The detector optical aperture can be configured to receive the concentrated light beam. The actuators can move the detector optical aperture in a spatial plane to a location of the focus spot. The receiver has a detector optically coupled to the detector optical aperture to receive the concentrated light beam from the detector optical aperture.

Abstract: Provided is an image sensor including a sensor chip including a first substrate and a first interconnection layer, a logic chip including a second substrate and a second interconnection layer, a through-hole penetrating a portion of the second interconnection layer, the first substrate, and the first interconnection layer, and a first connection structure disposed on an inner surface of the through-hole and extending from the first substrate toward the second interconnection layer, wherein the first interconnection layer includes a first interlayer insulating layer and a first interconnection pattern, the second interconnection layer includes a second interlayer insulating layer and a second interconnection pattern, the through-hole includes first and second trenches respectively extending from the through-hole toward the second interconnection layer, bottom surfaces of the first and second trenches contact the second interconnection pattern, and a bottom surface of the through-hole contacts the first interco

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting photon detectors. In one aspect, a photon detector includes: (1) a first waveguide configured to guide photons from a photon source; (2) a second waveguide that is distinct and separate from the first waveguide and optically-coupled to the first waveguide; and (3) a superconducting component positioned adjacent to the second waveguide and configured to detect photons within the second waveguide.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element. The metal pattern layer contains at least one of titanium or chromium.

Abstract: This disclosure provides methods of fluorescence microscopy imaging for the analysis of biological samples. More particularly, this disclosure provides methods of reducing crosstalk in multiplexed fluorescence imaging.

Abstract: A microarray chip imaging detector comprises a housing configured to receive a microarray chip. The detector includes a laser assembly supported by the housing and oriented at an angle relative to the microarray chip, the laser assembly configured to transmit an excitation beam along a first axis to samples on the microarray chip. The detector also includes a camera supported by the housing and positioned along a second axis, the camera configured to receive fluorescent light emitted from fluorophores in the samples on the microarray chip, the second axis oriented at an angle less than 30 degrees relative to the first axis. The housing includes a plurality of baffles positioned between the microarray chip and the camera, and a plurality of laser beamstops to receive the excitation beam reflected off the microarray chip.

Abstract: An optical energy detector and a method for detecting a broad range of optical energy are disclosed. The detector comprising a superconducting nanowire filament on a substrate, an electrical current pulse source, a laser pulse source, a first pickup probe, and a second pickup probe for measuring the voltage across the filament. The filament is maintained below a supercomputing critical temperature. The filament is biased with an electrical current pulses slight below the critical current of the filament which creates nonequilibrium state. The filament is excited by the laser pulses, and as a result, a voltage appears after a delay time. The voltage is measured for determining the amount of the optical energy. A reference curve of the voltage and the corresponding delay time can be used for calibrating any light source.

Abstract: The invention relates to a safety device for a lifting gate, in particular for a fast-running lifting gate having a gate leaf movable up and down and guided along both lateral gate opening edges in frames, a free leading edge of the gate leaf being assigned, at a distance (D) below the leading edge, to a photoelectric barrier (LS) which travels with the movement of the gate leaf, wherein the distance (D) can be reduced in a lower end region of a travel path of the gate leaf, and wherein at least a transmitting and/or a receiving unit and/or an opposite reflector unit of the photoelectric barrier (LS) is guided and/or arranged within a frame body of the frames.

Abstract: An optical path correction subassembly, an optical detection assembly, and an optical detection system are provided. The optical path correction subassembly can be optionally configured to be applied to a light detector. The optical path correction subassembly includes a holder structure and an optical path correction structure carried by the holder structure, and the optical path correction structure has a light beam guiding surface arranged as a reverse inclination inclined relative to a vertical line. The light beam guiding surface of the optical path correction structure can be configured to effectively or accurately guide a predetermined light beam to a light receiving surface of the light detector so as to facilitate collection of the predetermined light beam. The light beam guiding surface of the optical path correction structure can be arranged at an acute angle relative to the light receiving surface of the light detector.

Abstract: In an embodiment a method for measuring ambient light includes successively synchronizing optical signal acquisition phases with extinction phases of a disruptive light source, wherein the disruptive light source periodically provides illumination phases and the extinction phases, accumulating, in each acquisition phase, photo-generated charges by at least one photosensitive pixel comprising a pinned photodiode, wherein an area of the pinned photodiode is less than or equal to 1/10 of an area of the at least one photosensitive pixel, transferring, for each pixel, the accumulated photo-generated charges to a sensing node, converting, for each pixel, the transferred charges to a voltage at a voltage node and converting, for each pixel, the transferred charges to a digital number.

Abstract: Configurable sensor units and sensor apparatus are provided. A configurable sensor unit comprises a sensor device for generating an electrical signal, dependent on a stimulus sensed by the device, in a circuit, and a programmable non-volatile memory element operable in the circuit as a load resistor for the sensor device, whereby resistance of the load resistor depends on a programmed state of the memory element. The sensor unit has an output for providing an output signal dependent on the aforementioned electrical signal and programmed state. Sensor apparatus may comprise a plurality of these configurable sensor units. Such sensor apparatus may be configured to perform in-sensor compute operations for neural network architectures. Further sensor apparatus comprises a configurable sensor unit and a controller for programming the memory element of the sensor unit to a programmed state dependent on an operating requirement for the sensor unit.

Abstract: Apparatuses, systems, method, reagents, and kits for conducting assays as well as process for their preparation are described. They are particularly well suited for conducting automated analysis in a multi-well plate assay format.

Abstract: The present disclosure provides for process and temperature compensation in a transimpedance amplifier (TIA) using a dual replica via monitoring an output of a first TIA (transimpedance amplifier) and a second TIA; configuring a first gain level of the first TIA based on a feedback resistance and a reference current applied at an input to the first TIA; configuring a second gain level of the second TIA and a third TIA based on a control voltage; and amplifying a received electrical current to generate an output voltage using the third TIA according to the second gain level. In some embodiments, one or both of the second TIA and the third TIA include a configurable feedback impedance used in compensating for changes in the second gain level due to a temperature of the respective second or third TIA via the configurable feedback impedance of the respective second or third TIA.