Abstract: Thin film field effect transistors utilize MP.sub.x as the active switched semiconductor where M is at least one alkali metal, P is at least one pnictide, and x ranges from 15 to infinity. Phosphorus is preferred as the dominant pnictide and potassium is preferred as the dominant alkali metal. The local order of the semiconductors may vary from an all parallel pentagonal tube-like structure to a layer-like puckered sheet structure. The all parallel pentagonal tube structure is preferred. Metal insulated semiconductor (MISFETS) and metal semiconductor (MESFETS) field effect transistors are disclosed. The semiconductor is preferably doped with up to approximately 1/2% nickel, iron, or chromium, to reduce the density of defect levels in the bandgap without increasing the conductivity. The semiconductors may be doped with 1/2-1% of the same metals to increase conductivity so as to provide normally ON devices.

Abstract: Non-ionic surfactants prepared by reaction of ethoxylated bisphenols and sulfating agents such as sulfamic acid, sulfuric acid and chlorosulfonic acid are employed in metal electroplating baths and processes to increase the useful operating temperature limits of the baths in comparison to those using other non-ionic surfactants. The surfactants are particularly useful as additives in acid zinc electroplating baths, and especially acid zinc electroplating baths either completely devoid of ammonium ion or containing low amounts of ammonium ion.

Abstract: The invention relates to mild steel sheet, having deposited on at least one of its major faces a sub-layer of tin in an amount of 0.1 to 1.05 g/l and a composite coating containing chronmium and chronmium oxide. The content of chromium in the composite coating is more than 5 .mu.g/cm.sup.2 while the content of chromium oxide in the coating, expressed in terms of chromium, is less than 2.5 .mu.g/cm.sup.2.The resultant sheets give improved welds when joined by electric welding and are particularly suited for making can bodies for food cans.