Patents Examined by Ginette Perala
  • Capacitor constructions and semiconductor processing method of forming capacitor constructions
    Patent number: 6140203
    Abstract: A semiconductor processing method of forming a capacitor includes, a) providing a mass of electrically insulative oxide of a first density; b) densifying the oxide mass to a higher second density, the densified oxide mass being characterized by a wet etch rate of less than or equal to about 75 Angstroms/minute in a 100:1 by volume H.sub.
    Type: Grant
    Filed: April 12, 1999
    Date of Patent: October 31, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Klaus Florian Schuegraf, Bob Carstensen