Patents Examined by Ginette Peralte
  • Patent number: 6403473
    Abstract: A process for producing metal-containing layers, in particular metal-containing diffusion barriers, contact layers and/or antireflection layers. The process according to the invention has a first step in which a metal layer having a predetermined thickness at an elevated temperature is applied to a semiconductor structure. Next, the metal layer is cooled in a nitrogen-containing atmosphere, resulting in a metal nitride layer being formed.
    Type: Grant
    Filed: May 20, 1999
    Date of Patent: June 11, 2002
    Assignee: Infineon Technologies AG
    Inventors: Sven Schmidbauer, Alexander Ruf, Oliver Gehring