Abstract: Methods of producing a graphic mesh for a solar module are described in which mesh parameters such as warp fiber thickness, weft fiber thickness, and open area size are determined to meet a target energetic efficiency and a chromatic effectiveness. In some embodiments, chromatic effectiveness is based on mesh count, where the mesh count is set according to a distance at which the mesh will be viewed when assembled into the solar module. The mesh has a plurality of warp fibers having the warp fiber thickness and a plurality of weft fibers having the weft fiber thickness, that are interlaced to form a plurality of mesh unit cells. A graphic appearance is printed into the mesh using a coloring substance, where the coloring substance is absorbed by the fiber material to form the graphic mesh.

Abstract: A method of manufacturing a photovoltaic product (1) with a plurality of serially interconnected photovoltaic cells (1A, 1B) is disclosed that comprises depositing a stack with a bottom electrode layer (12), a top electrode layer (16) and a photovoltaic layer (14) arranged between said first and said top electrode layer, the bottom electrode layer and the photovoltaic layer having an interface layer (13). The method further comprises partitioning said stack into respective lateral portions associated with respective photovoltaic cells (1A, 1B), with a boundary region (1AB) between each photovoltaic cell (1A) and a subsequent photovoltaic cell (1B), and serially interconnecting mutually subsequent photovoltaic cells in a boundary region. Partitioning includes forming one or more trenches (20; 22; 23) extending through the top electrode layer and the photovoltaic layer to expose the bottom electrode layer, with at least an irradiation sub-step and subsequent thereto a mechanical fragment removal sub-step.

Abstract: The inventive concept discloses a solar cell and a method for manufacturing the same. The solar cell includes a semiconductor substrate, an emitter layer disposed on one surface of the substrate, and a cooling layer disposed on one surface of the emitter layer, and the cooling layer absorbs a far-infrared ray from irradiated sunlight and emits a wavelength of the absorbed far-infrared ray.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.

Abstract: A method of producing photovoltaic cells with the ?-tandem architecture based on crystalline silicon substrates and quantum dots, ensuring both effective and stable operation of the entire tandem system as well as high absorption in the spectral range from UV to MIR and operation in scattered and incident light conditions at different angles, acting as an anti-reflective layer. A further purpose of the invention is to develop a new structure of a ?-tandem photovoltaic cell based on microcrystalline silicon (Si) layers and a layer of nanometric semiconductor structures with a core-shell architecture such that the resulting structures work as a tandem cell with the characteristics of micro-cells, connected together in its lower part.

Abstract: A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

Abstract: Provided are a photovoltaic module, comprising a solar cell string having a plurality of solar cells arranged in sequence, adjacent solar cells being connected by solder strips, the solder strip being connected to a front surface of one solar cell and to a back surface of the other solar cell, a long-side dimension of the solar cell being within a range of 150 mm to 220 mm; two protective adhesive layers respectively covering front and back surfaces of the solar cell string, a dimensional difference between thicknesses of one protective adhesive layer and the solder strip being defined as first thickness, a ratio of the first thickness to the thickness of one protective adhesive layer being not less than 0 and not greater than 20%; a transparent plate covering the protective adhesive layer on the front surface; and a back plate covering the protective adhesive layer on the back surface.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.

Abstract: A semiconductor device includes element regions which each include a first region of a first conductivity type, a second region of the first conductivity type on the first region and having a higher impurity concentration than that of the first region, a third region of a second conductivity type on the second region. The second region is between the first and third regions in a first direction. A first insulating portion surrounds each element region in a first plane. A fourth region of the first conductivity type surrounds each element region and the first insulating portion in the first plane. The fourth region has a higher impurity concentration than that of the first region. A quenching structure is above a part of the fourth region in the first direction and electrically connected to the third region.

Abstract: A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by Ax-cBy with value of x being smaller by c with respect to a compound AxBy according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: A solar cell 100 includes a substrate 1, a first electrode 6, an electron transport layer 2, a first photoelectric conversion layer 3, and a coating layer 5. The first photoelectric conversion layer 3 is disposed between the first electrode 6 and the substrate 1. The substrate 1 has a first main surface and a second main surface, and the second main surface has an uneven structure. The electron transport layer 2 has a first main surface and a second main surface, and the first main surface and the second main surface each have an uneven structure. The first photoelectric conversion layer 3 has a first main surface and a second main surface. The second main surface of the substrate 1 faces the first main surface of the electron transport layer 2.

Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

Abstract: A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.

Abstract: An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated.

Abstract: An energy harvesting system for generating electrical energy, includes a first substrate, a perovskite layer formed on the first substrate, a charge transport layer disposed on the perovskite layer, and the charge transport layer being configured to slide over the perovskite layer, and a second substrate formed on the charge transport layer.

Abstract: The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.

Abstract: A visibly transparent luminescent solar concentrator (LSC) is disclosed. The LSC includes a transparent substrate having at least one edge surface. A dye layer is coupled to the substrate, the dye layer having a peak absorption wavelength outside the visible band, the dye layer being configured to re-emit light at a peak emission wavelength outside the visible band, at least a portion of the re-emitted light being waveguided to the edge surface of the substrate. A photovoltaic device is coupled to the edge surface of the transparent substrate, the photovoltaic device being configured to absorb light at the peak emission wavelength and generate electrical energy.

Abstract: A solar cell 100 includes a substrate 1, a first electrode 6, an electron transport layer 2, a first photoelectric conversion layer 3, and a coating layer 5. The first photoelectric conversion layer 3 is disposed between the first electrode 6 and the substrate 1. The substrate 1 has a first main surface and a second main surface, and the second main surface has an uneven structure. The electron transport layer 2 has a first main surface and a second main surface, and the first main surface and the second main surface each have an uneven structure. The first photoelectric conversion layer 3 has a first main surface and a second main surface. The second main surface of the substrate 1 faces the first main surface of the electron transport layer 2.