Abstract: The present application relates to a display panel and a display device. The display panel includes a substrate, a driving layer group, and an anode layer stacked together. The driving layer group is located in the second display region. The anode layer includes a first anode located in the first display region. The first anode is electrically connected to a drain of the driving layer group via a conducting wire. The display panel further includes a first isolation layer and a lap layer located in the first display region. The first isolation layer is arranged between the lap layer and the conducting wire. The first isolation layer includes a first via hole. The conducting wire passes through the first via hole to connect with the lap layer, to electrically connect the first anode to the drain electrode of the driving layer group.

Abstract: A display panel, a manufacturing method thereof, and an electronic device are provided. By disconnecting a portion of the organic functional layer in the display panel positioned on the metal spacer and other parts of the organic function layer, and exposing a side of the metal spacer, a cathode and a metal spacer can be directly connected when the cathode is formed by a vapor deposition on the entire surface. There is no need for additional masks and the process of etching organic functional layers, therefore a manufacturing process can be simplified, and the production cost can be reduced.

Abstract: The present disclosure provides an overlay mark, an overlay error measurement method for a wafer, and a wafer stacking method. The overlay mark includes a first overlay mark disposed on a first layer, and a second overlay mark disposed on a second layer. The first layer and the second layer are stacked. The first overlay mark includes at least one first overlay sub-mark, and each of the at least one first overlay sub-mark is circular in shape. The second overlay mark includes a second overlay sub-mark, and the second overlay sub-mark is in a center-symmetrical shape including a plurality of linear graphics.

Abstract: A display device includes a substrate including a light emission area, a light transmission area, and a boundary between the light emission area and the light transmission area, and in the light emission area, each of a circuit layer including transistors each comprising a semiconductor pattern and a gate, inorganic insulation layers on the semiconductor pattern and the gate, a light emission element on the plurality of inorganic insulation layers and connected to the circuit layer, the inorganic insulation layers respectively defining inclined side surfaces corresponding to the boundary, and among the transistors, a boundary transistor closest to the boundary. The semiconductor pattern and the gate of the boundary transistor are each inclined along the inclined side surfaces of the plurality of inorganic insulation layers.

Abstract: Provided is a semiconductor device having a high degree of integration, which includes first and second transistors and a first insulating layer. The first transistor includes a first semiconductor layer, a second insulating layer, and first to third conductive layers. The second transistor includes a second semiconductor layer, a third insulating layer, and fourth to sixth conductive layers. The first insulating layer includes a region in contact with the first semiconductor layer and the first conductive layer and includes an opening reaching the first conductive layer. The first semiconductor layer is in contact with a top surface of the first conductive layer, an inner wall of the opening, and the second conductive layer. The second conductive layer is positioned over the first insulating layer. The third conductive layer is positioned over the first semiconductor layer and includes a region overlapping with the inner wall of the opening with the second insulating layer positioned therebetween.

Abstract: A display device includes a substrate, a display unit, a binding unit, and an encapsulation layer. The substrate includes an effective display region and a non-display region adjacent to the effective display region, and includes a silicon-containing compound material. The display unit is arranged in the effective display region. The binding unit is arranged in the non-display region and includes a binding portion and signal connection lines. Two ends of the signal connection line are connected to the display unit and the binding portion, respectively. The encapsulation layer wraps the display unit and a part of the signal connection lines The encapsulation layer covers a portion of each of the plurality of signal connection lines, at least a portion of each of the plurality of signal connection lines disposed inside a region covered by the encapsulation layer is configured as a heavily doped semiconductor connection line.

Abstract: An organic light-emitting display panel and a preparation method therefor, and a display apparatus. The organic light-emitting display panel comprises: a substrate; a plurality of organic light-emitting diodes, wherein the plurality of organic light-emitting diodes are located on the substrate, and each of the organic light-emitting diodes is provided with a first electrode, a second electrode, and a light-emitting layer and a hole injection layer which are located between the first electrode and the second electrode; and anti-crosstalk isolation electrodes, wherein each of the anti-crosstalk isolation electrodes is located at a gap between two adjacent organic light-emitting diodes, the anti-crosstalk isolation electrodes are configured to connect to a fixed voltage, and a voltage difference between each anti-crosstalk isolation electrode and each second electrode is less than a voltage difference between each first electrode and each second electrode.

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

Abstract: A display region includes a second display region that transmits light used in a camera on the inner side of a first display region. A first electrode in the first display region has a structure in which a first lower transparent conductive layer, a first reflective conductive layer, and a first upper transparent conductive layer are layered in order. A first electrode in the second display region has a structure in which a second lower transparent conductive layer, a second reflective conductive layer, and a second upper transparent conductive layer are layered in order. The second reflective conductive layer is thinner than the first reflective conductive layer on the inner side of an opening of an edge cover.

Abstract: A device includes a source region, a drain region, a channel region, a pair of depletion gates, an accumulation gate, and a superconductive resonator. The channel region is between the source region and the drain region. The pair of depletion gates are spaced apart from each other. The pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates. The accumulation gate is above and crossing the pair of depletion gates. The superconductive resonator is laterally adjacent the quantum dot qubit region.

Abstract: An organic device comprising a pixel region in which pixels are arranged, a peripheral region including a pad electrode, and a sealing layer arranged to cover the pixel and peripheral regions, is provided. In the peripheral region, an opening of the sealing layer is formed. The opening comprises a first portion extending from a plane defined by an upper surface of the sealing layer towards the pad electrode, and a second portion which has an outer edge inside outer edges of the first portion and the pad electrode and opens from a lower end of the first portion to the pad electrode. A conductive particle for electrical connection to an electrode is arranged on the pad electrode, and a diameter of the conductive particle is larger than a height of the second portion.

Abstract: An electronic apparatus includes: a display panel comprising a first display area, in which a first display element is arranged, and a second display area, in which a second display element and a transmission area are arranged; and a component on a lower surface of the display panel and overlapping the second display area, wherein the display panel includes: a substrate; a second pixel circuit on the substrate and electrically connected to the second display element, the second pixel circuit comprising at least one thin-film transistor; an organic insulating layer covering the at least one thin-film transistor; and a second transparent connection electrode on the organic insulating layer in the second display area and electrically connected to the second pixel circuit, wherein the second display element comprises a second pixel electrode on a same layer as the second transparent connection electrode.

Abstract: The present disclosure provides a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes a base substrate and a drive structure layer disposed on the base substrate, wherein the drive structure layer includes a first transistor and a second transistor arranged side by side, the first transistor includes a low temperature poly silicon transistor, and the second transistor includes an oxide transistor; the first transistor includes a first bottom gate electrode simultaneously served as a shielding layer, the second transistor includes a second bottom gate electrode simultaneously served as a shielding layer, and the first bottom gate electrode and the second bottom gate electrode are arranged in a same layer.

Abstract: The present disclosure provides an organic light emitting diode and a display panel. The organic light emitting diode includes: a base; a micro-nano structure layer on a side of the base; a first electrode on a side of the micro-nano structure layer away from the base; an electroluminescence layer on a side of the first electrode away from the micro-nano structure layer; and a second electrode on a side of the electroluminescence layer away from the first electrode.

Abstract: A three dimensional semiconductor device is disclosed. The tree dimensional semiconductor device includes a word line stack over a substrate and a channel pillar structure passing through the word line stack in a vertical direction perpendicular to a top surface of the substrate. The channel pillar structure includes a channel structure. The channel structure includes a blocking layer, a trap layer, a tunneling layer, a channel layer, a filling layer, and a back gate electrode. The channel structure has a pillar shape.

Abstract: Disclosed is a display device comprising: a substrate comprising a display area in which pixel areas are disposed and a non-display area adjacent to the display area; light emitting portions disposed in the display area and comprising at least one of the pixel areas; the light emitting portions emitting light through the pixel areas; connecting portions connecting the light emitting portions; a bank defining the light emitting portions and the connecting portions; and a light emitting layer formed on the light emitting portions and the connecting portions.

Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.

Abstract: A display substrate including a drive-circuit layer and a light-emitting structure layer, a preparation method thereof, and a display device, the light-emitting structure layer includes an anode, a pixel definition layer, an organic light-emitting layer and a cathode, and an auxiliary electrode and an organic light-emitting block, arranged sequentially, the pixel definition layer includes an anode opening exposing the anode and an electrode opening exposing the auxiliary electrode, the organic light-emitting block is separated from the organic light-emitting layer, the auxiliary electrode includes the first, second and third auxiliary electrodes arranged sequentially; the cathode includes a first horizontal lapping part lapping with the first auxiliary electrode and a second sidewall lapping part lapping with the second auxiliary electrode, the thickness of the second sidewall lapping part in the direction parallel to the substrate is greater than that of the first horizontal lapping part in the direction per

Abstract: An emissive display device includes a transistor disposed on a substrate, a first insulating layer on the transistor, a separation line disposed on the first insulating layer, a second insulating layer on the first insulating layer, the second insulating layer including a first opening overlapping the separation line, a first and second pixel electrodes on the second insulating layer at opposite sides of the separation line, a pixel defining layer on the second insulating layer, and an emission member on the first and second pixel electrodes, the pixel defining layer, and the separation line. The pixel defining layer includes a second opening overlapping the separation line. The emission member is separated by the separation line. The emission member includes a first emission unit, a charge generating layer on the first emission unit, and a second emission unit on the charge generating layer.

Abstract: A package assembly includes an interposer module on a package substrate, a thermal interface material (TIM) film on the interposer module, and a package lid that includes a plate portion on the TIM film and a step region projecting away from the plate portion and located over the TIM film and over an edge region of the interposer module.