Abstract: A method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped or siliconized zones in a semiconductor body. Fluorine ions are implanted into the heavily doped or siliconized zone in the vicinity of a contact hole before a titanium layer is applied to the heavily doped or siliconized zone in the vicinity of the contact hole. As a result of the fluorine, any oxide layers present in the contact hole region can be broken up by less titanium, with the result that a thinner titanium layer is sufficient. In addition, the formation of titanium silicide in the contact hole is promoted.