Abstract: An active element has first and second regions and a control electrode. Carriers move between the first and second regions in a first direction. A motion of carriers is controlled by an electric signal applied to the control electrode. The first and second regions and control electrode extend in a second direction crossing the first direction from an input terminal to an output terminal. A conductive region is electrically connected to the first region from the input terminal to the output terminal. A trigger line extending in the second direction propagates an electric signal from the input terminal to the output terminal. The electric signal propagating the trigger line is applied to the control electrode at a corresponding position in the second direction. An output line extending in the second direction propagates an electric signal from the input terminal to the output terminal.

Abstract: A low dielectric constant material and a process for controllably reducing the dielectric constant of a layer of such material is provided and comprises the step of exposing the layer of dielectric material to a concentration of an oxygen plasma at a temperature and a pressure sufficient for the oxygen plasma to etch the layer of dielectric material to form voids in the layer of dielectric material. The process may also include the step of controlling the reduction of the dielectric constant by controlling the size and density of the voids. The size and density of the voids can be controlled by varying the pressure under which the reaction takes place, by varying the temperature at which the reaction takes place, by varying the concentration of the oxygen plasma used in the reaction or by varying a combination of these parameters. The process of the present invention is particularly useful in the fabrication of semiconductor devices.

Abstract: A new method is provided for the creation of a high Q inductor. STI trenches are etched for both the active region and the inductor region. The location of the STI region for the inductor is removed from the active region by a significant distance. A thick layer of photoresist is deposited over the surface of the substrate that does not coincide with the surface of the substrate over which the inductor is to be created. A high-energy ion implant is performed after which the thick layer of photoresist is removed. The inside surfaces of the STI trenches are lined after which the STI trenches are filled and the process of creating the semiconductor device proceeds, using conventional methods of fabrication of active components and the inductor whereby the inductor is created overlying the surface of the substrate into which the high-energy ion implant has been performed.

Abstract: A method for using CMP processes in the salicide process for preventing bridging.

Abstract: A method of forming a nitrogen-implanted gate oxide in a semiconductor device includes preparing a silicon substrate; forming an oxide layer on the prepared substrate; and implanting N+ or N2+ ions into the oxide layer in a plasma immersion ion implantation apparatus.