Patents Examined by Gwen Blackwell
  • Patent number: 8999475
    Abstract: A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: April 7, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Koji Mitsuhashi