Abstract: An insulating ceramic includes a fired mixture of a MgO—MgAl2O4 ceramic and a borosilicate glass, in which MgAl2O4 crystal phase and at least one of Mg3B2O6 crystal phase and Mg2B2O5 crystal phase are the major crystal phases. The insulating ceramic can be obtained by firing at low temperatures of 1000° C. or less, can be fired in conjunction with Ag or Cu, has a high Q-value and satisfactory mechanical strength, and is suitable for use at high frequencies.

Abstract: An insulator ceramic composition making it possible to obtain a sintered material which can be fired at low temperature of 1000° C., can be co-sintered with Ag and Cu, exhibits superior mechanical strength, exhibits high Q value and is appropriate for using high frequencies, is provided. The insulator ceramic composition is composed of (A) an MgO—MgAl2O4 ceramic powder, and (B) a glass powder containing silicon oxide in a proportion of about 13 to 50 weight % in terms of SiO2, boron oxide in a proportion of about 3 to 60 weight % in terms of B2O3, and aluminum oxide in a proportion of 0 to about 20 weight % in terms of Al2O3.

Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

Abstract: An improved via and contact hole fill composition and method for using the composition in the dual damascene production of circuits is provided. Broadly, the fill compositions include a quantity of solid components including a polymer binder and a solvent system for the solid components. The boiling point of the solvent system is less than the cross-linking temperature of the composition. Preferred solvents for use in the solvent system include those selected from the group consisting of alcohols, ethers, glycol ethers, amides, ketones, and mixtures thereof. Preferred polymer binders are those having an aliphatic backbone and a molecular weight of less than about 80,000, with polyesters being particularly preferred.

Abstract: A superconductor structure is disclosed, comprising a composite body made of an electrically insulating substrate to which an intermediate layer is bonded, a buffer layer is deposited on the intermediate layer and a layer of a metal-oxide high Tc superconductor material is deposited on the buffer layer. The intermediate layer comprises a glass material with a coefficient of thermal expansion greater than 6×10−6 K−1. To produce the structure, at least one deposition process is selected in which the maximum temperature is at most 150 K higher than the transformation temperature of the glass material.

Abstract: A diamond-coated hard metal member comprising a WC-based hard metal substrate having a roughened surface formed by electrolytic etching and a diamond coat layer coating the roughened surface with an interlayer provided interposed therebetween. The interlayer coats the substrate, and is a W layer having a roughened surface corresponding to the roughened surface of the substrate. The unetched substrate comprises disperse phases dispersed therein in an amount of from 2 to 5 mol-%, and has disperse phases having an average longest diameter of from not less than 0.5 &mgr;m to less than 2 &mgr;m on the surface thereof in a density of from not less than 0.1/&mgr;m2 to not more than 0.2/&mgr;m2.

Abstract: A structural body has an aluminum nitride sintered body, a silicon carbide film formed on a surface of the sintered body, and an intermediate layer generated between the sintered body and the silicon carbide film. The intermediate layer is mainly made of a silicon nitride. Preferably, the intermediate layer includes smaller than 5 wt % of carbon and smaller than 5 wt % of aluminum, and a thickness of the intermediate layer is greater than 0.2 &mgr;m.

Abstract: These glass bodies are light weight porous structures such as a boules of high purity fused silica or ultra-low expansion glass. More specifically, the porous structures are supports for mirror blanks. Porous glass is made utilizing flame deposition of pure silica or doped silica in a manner similar to the production of high purity fused silica. Bubbles or seeds are formed in the glass during laydown. Several means of creating and controlling these seeds are available. The processes use incomplete combustion to create the bubbles. There are a number of different steps to create the incomplete combustion. One such step is a short distance between the hydrolysis flame and the glass precursor.

Abstract: An optical element having a water repellant composite layer composed of CaF2 and TiO2. The optical element includes a substrate and a composite layer having a chemical formula (100-X)CaF2—(X)TiO2 formed over the substrate. The X in the chemical formula represents the molar percentage of TiO2 in the composite layer. Through the addition of TiO2 into a CaF2 layer to form the composite layer, surface roughness, adhesion strength and hardness of the layer in the optical element is improved without compromising water resistant capacity. For a composite layer having a percentage composition of TiO2 between 2% to 100%, contact angle of water droplets is always greater than 100° comparable with Teflon. The refractive index varies according to the composition, but in general, the refractive index falls between 1.23 (2%TiO2) to 2.3 (pure TiO2) for incoming light with a wavelength of 600 nm.

Abstract: The present invention provides a film-forming agent for an insulating film-coated non-oriented electromagnetic steel sheet showing a high space factor, and excellent in blanking quality, adhesion of the film and slip characteristics subsequent to stress relief annealing, a non-oriented electromagnetic steel sheet having the insulating film and a method for producing the same. The present invention provides a non-oriented electromagnetic steel sheet having an insulating film excellent in film properties, the insulating film comprising a metal phosphate and an organic resin as the principal components, the 1s peak intensity of C being from 4 to 20 times as much as the 2s peak intensity of P when the insulating film is measured by photoelectron spectral analysis.

Abstract: Sanitary ware which strongly resists adhesion of dirt and which may be easily cleaned with a weak flow of water, over a long period of time, comprises a first coloring glaze layer formed on the surface of a ceramic body, a second transparent glaze layer formed on the first glaze layer, and an engobe layer formed between said body surface and said first glaze layer.

Abstract: The invention concerns a printed valuable document with at least one authentication mark in the form of a luminescent substance based on a host lattice doped with at least one rare earth metal. The host lattice largely absorbs light in the entire visible region of the spectrum, is excitable in substantial parts of the visible region of the spectrum, and is at least partially transparent at least in the wavelength range between 0.8 &mgr;m and 1.1 &mgr;m. The host lattice also features a garnet or perovskite structure. The rare earth metal emits light in the wavelength range between 0.8 &mgr;m and 1.1 &mgr;m.

Abstract: A glass substrate having a transparent conductive film of SnO2 is disclosed, in which the transparent conductive film is prevented from developing hair cracks even when it has a thickness of 5,000 Å or larger. The glass substrate comprises an alkali-containing base glass plate 10 having a smooth surface and, formed thereon in this order, an undercoat 12 for imparting roughness which has a thickness of 150 Å or larger and is made of a crystalline metal oxide, a continuous alkali barrier film 14 made of SiO2 and having such a small thickness as to reflect the surface roughness of the undercoat, and a transparent conductive film 16 made of SnO2 doped with one or more appropriate impurities and having a thickness of 5,000 Å or larger. The transparent conductive film has an adhesion strength of 37 mN or higher as measured in accordance with “Adhesion Test for Thin Film Deposited on Glass Substrate ” as provided for in JIS R3255-1997.

Abstract: The invention relates to a transparent substrate, in particular made of glass, provided with a thin-film stack including at least one metallic layer with infrared reflection properties, in particular a low-emission layer, arranged between two dielectric-based coatings. According to the invention, the dielectric-based coating above the metallic layer has the following sequence of layers deposited in this order: a) layer(s) with material(s) with refractive index ni-2 of at most 2.2; b) layer(s) with material(s) with refractive index ni-1 at least 0.3 less than that of the last layer(s) ni; c) last layer(s) with material(s) with refractive index ni substantially equal to ni-2.

Abstract: The present invention provides a silicon wafer free of vacancy agglomerates and interstitial agglomerate; wherein the silicon wafer has a defect density of an oxide film of 0.1 piece/cm2 or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer has an in-plane dispersion of 20% or less of a p-n junction leakage current in a p-n junction area of 1 mm2 or more of a p-n junction portion when the p-n junction portion is formed on the surface of the wafer. The present silicon wafer is capable of achieving a higher performance, higher yield and uniformity of characteristics of semiconductor devices comparable to a wafer provided with a pure epitaxial layer, without deteriorating the gettering ability of the silicon wafer.

Abstract: The invention concerns a printed valuable document with at least one authentication feature in the form of a luminescent substance based on a host lattice doped with at least one rare earth metal. The host lattice largely absorbs in the entire visible region of the spectrum, is excitable in large parts of the visible region of the spectrum and at least partially transparent in at least the wavelength range between 0.8 &mgr;m and 1.1 &mgr;m. In addition, the host lattice contains chromium as an absorptive substance in such a concentration that amplification of the emission by the luminescent substance takes place. The rare earth metal emits in the wavelength region between 0.8 &mgr;m and 1.1 &mgr;m.

Abstract: This self-compensating spiral for a mechanical spiral balance-wheel oscillator in watchwork or other precision instrument, made of a paramagnetic alloy, contains at least one of the elements Nb, V, Ta, Ti, zr, Hf and is covered with a substantially uniform oxide layer having a thickness greater than or equal to 20 nm, formed by subjecting the said spiral to an anodizing treatment.

Abstract: The present invention relates to a coated cemented carbide cutting tool particularly for turning applications with high toughness demands, of stainless steels of different compositions and microstructures, and of low and medium alloyed non-stainless steels. The cemented carbide is WC−Co based with a composition of 9−12 wt % Co, 0.2−2.0 wt % cubic carbides from elements from group IVa, Va or VIa of the periodic table and balance WC with a grain size of 1.5−2 &mgr;m. The binder phase is W-alloyed with a CW-ratio in the range of 0.77−0.95. The coating includes a multilayered structure of the composition (TixA11−x,)N in which x varies repeatedly between the two ranges 0.45<x<0.55 and 0.70<x<0.80, adding up to a total thickness of 2-9 &mgr;m.

Abstract: The formation of passivation coatings on ferrous substrates is disclosed by heating the substrate in an aqueous 1.0 to 6.0 M basic metal hydroxide treatment bath containing SiO2 and a water-soluble glycol, at a temperature that is effective to form a passivation coating on the substrate until the passivation coating is formed thereon, wherein the treatment bath contains from about 0.25 to about 1.0 moles of SiO2 per liter of glycol and water. Acmite passivation coatings formed by this method are also disclosed.

Abstract: The present invention is directed to a method of forming a new material layer or region near an interface region of two dissimilar materials, and an optional third layer, wherein at least one of said dissimilar materials or optional third is capable of being heated by microwave energy. The method of the present invention includes a step of irradiating a structure containing at least two dissimilar materials and an optional third layer under conditions effective to form the new material layer in the structure. An apparatus for conducting the microwave heating as well as the structures formed from the method are also described herein.