Patents Examined by H. Boudreau
  • Patent number: 6091845
    Abstract: An improved technique for inspecting photomasks employs simulated images of the resist pattern. A simulated image of an original pattern is compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern. Alternatively, simulated images generated from captured data from two different instances of the same original pattern formed in a photomask are compared.
    Type: Grant
    Filed: February 24, 1998
    Date of Patent: July 18, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Christophe Pierrat, James Burdorf