Abstract: Multigate devices and methods for fabricating such are disclosed herein. An exemplary multigate device includes a first FET disposed in a first region; and a second FET disposed in a second region of a substrate. The first FET includes first channel layers disposed over the substrate, and a first gate stack disposed on the first channel layers and extended to warp around each of the first channel layers. The second FET includes second channel layers disposed over the substrate, and a second gate stack disposed on the second channel layers and extended to warp around each of the second channel layers. A number of the first channel layers is greater than a number of the second channel layers. A bottommost one of the first channel layers is below a bottommost one of the second channel layers.

Abstract: Discussed is a method of manufacturing a display device, the method including: introducing semiconductor light emitting devices including a magnetic material into a fluid chamber; transferring a substrate to the fluid chamber, the substrate including assembly electrodes, an insulating layer covering the assembly electrodes, and open holes in the insulating layer and exposing portions of both ends of the assembly electrodes; applying a magnetic force to the semiconductor light emitting devices introduced into the fluid chamber to move the semiconductor light emitting devices in one direction; and forming an electric field so that the moving semiconductor light emitting devices are disposed at preset positions of the substrate, wherein a probe pin is in contact with the assembly electrodes exposed through the open holes to individually apply a voltage to the assembly electrodes to form the electric field.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a memory film and a vertical composite metal oxide semiconductor channel that contains an outer semiconducting metal oxide channel layer having a first band gap and an inner semiconducting metal oxide channel layer having a second band gap that is different from the first band gap.

Abstract: A method for forming ohmic contacts on a compound semiconductor device is disclosed. A channel layer is formed on a substrate. A barrier layer is formed on the channel layer. A passivation layer is formed on the barrier layer. A contact area is formed by etching through the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. A sacrificial metallic layer is conformally deposited on the contact area. The sacrificial metallic layer is subjected to an annealing process, thereby forming a heavily doped region in the channel layer directly under the sacrificial metallic layer. The sacrificial metallic layer is removed to expose the heavily doped region. A metal silicide layer is formed on the heavily doped region.

Abstract: A method of forming a semiconductor device includes forming a transistor comprising a gate stack on a semiconductor substrate by, at least, forming a first dielectric layer on the semiconductor substrate, forming a dipole layer on the dielectric layer; forming a second dielectric layer on the dipole layer, forming a conductive work function layer on the second dielectric layer, forming a gate electrode layer on the conductive work function layer. The method also includes varying a distance between dipole inducing elements in the dipole layer and a surface of the semiconductor substrate by tuning a thickness of the first dielectric layer to adjust a threshold voltage of the transistor.

Abstract: A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.

Abstract: In some embodiments, a method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form first recesses; forming source/drain regions in the first recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the plurality of nanostructures; depositing a gate dielectric over and around the second nanostructures; performing an aluminum treatment on the gate dielectric; depositing a first conductive material over and around the gate dielectric; performing a fluorine treatment on the first conductive material; and depositing a second conductive material over and around the first conductive material.

Abstract: A semiconductor device includes a gate stack with conductive layers and insulating layers that are stacked alternately with each other, a first channel pattern passing through the gate stack, a second channel pattern coupled to the first channel pattern, the second channel pattern protruding above a top surface of the gate stack, an insulating core formed in the first channel pattern, the insulating core extending into the second channel pattern, a gate liner with a first portion that surrounds a top surface of the gate stack and a second portion that surrounds a portion of a sidewall of the second channel pattern, and a barrier pattern coupled to the gate liner, the barrier pattern surrounding a remaining portion of the sidewall of the second channel pattern.

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.

Abstract: A semiconductor device may include first and second active regions on a substrate, first and second insulating structures on the first and second active regions, respectively, vertically stacked channel layers on each of the first and second insulating structures, first and second gate structures intersecting the first and second active regions, respectively, and surrounding the channel layers, first and second source/drain regions doped with different conductivity-type impurities, the first and second source/drain regions being on sides of the first and second gate structures, respectively, and contacting the channel layers, and at least a portion of each of the first and second insulating structures extending upwardly along a side surface of a corresponding one of the first and second source/drain regions.

Abstract: A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a light emitting element on the substrate and having a first end and a second end, a third electrode disposed on the light emitting element, and electrically connecting the first electrode with the first end of the light emitting element, an insulating pattern disposed on the third electrode and exposing the second end of the light emitting element, and a fourth electrode on the substrate, and electrically connecting the second electrode with the second end of the light emitting element. A void may be formed between the light emitting element and the insulating pattern.

Abstract: A semiconductor module includes a semiconductor element and a molded resin case having a sidewall portion surrounding the semiconductor element. The sidewall portion has an upper surface to which a printed board it to be attached. The sidewall portion has an attachment hole from the upper surface thereof in a depth direction orthogonal to the upper surface, through which a screw is inserted to attach the printed board. The attachment hole is integrally provided in the case. The attachment hole has a columnar shape as a whole, and the attachment hole has a tip portion having a hemispherical shape.

Abstract: A light emitting device substrate includes an insulating layer, a plurality of upper pads spaced apart from each other in a matrix pattern on the insulating layer, a first circuit pattern inside the insulating layer, the first circuit pattern electrically connecting some of the plurality of upper pads to each other, a second circuit pattern inside the insulating layer, the second circuit pattern being under the first circuit pattern and electrically connected to the first circuit pattern, and a plurality of lower pads spaced apart from each other under the insulating layer, a number of the plurality of lower pads being smaller than a number of the plurality of upper pads, and at least one of the plurality of lower pads being electrically connected to two or more upper pads of the plurality of upper pads via the first circuit pattern and the second circuit pattern.

Abstract: The present technology relates to a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a stack with a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on a substrate, and a plurality of channel structures passing through the stack in a vertical direction. Each of the plurality of channel structures includes a core insulating layer, a channel layer, a tunnel insulating layer, and a charge storage layer that vertically extend in the same direction as the plurality of channel structures, and a dielectric constant of a partial region of the core insulating layer is lower than a dielectric constant of another region of the core insulating layer.

Abstract: A semiconductor memory device includes a substrate that includes a first region and a second region. The first region includes: a plurality of first word line layers; a first semiconductor layer having an outer peripheral surface opposed to the plurality of first word line layers; and a first electric charge accumulating film disposed between the plurality of first word line layers and the first semiconductor layer. The second region includes: a part of the plurality of first word line layers; a plurality of first insulating layers, the plurality of first insulating layers; a first contact having an outer peripheral surface opposed to the plurality of first insulating layers; a second semiconductor layer disposed between the plurality of first word line layers and the plurality of first insulating layers; and a second electric charge accumulating film disposed between the plurality of first insulating layers and the second semiconductor layer.

Abstract: In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 1015 cm?3 and 1019 cm?3, inclusive.

Abstract: A semiconductor device includes a semiconductor fin structure extending in a first direction on a substrate and a first dielectric fin structure extending parallel to the fin structure, the first dielectric fin structure being underneath a gate structure extending in a second direction that is perpendicular to the first direction. The device further includes a second dielectric fin structure extending parallel to the fin structure, the second dielectric feature being positioned beneath a gate cut feature. A top surface of the first dielectric fin structure is higher than a top surface of the second dielectric fin structure.

Abstract: According to an aspect of the present disclosure, a semiconductor device includes a substrate, a resin case surrounding a region just above the substrate in a planar view, a semiconductor chip provided in the region and an electrode including a first portion pulled out from an upper surface of the resin case and a second portion provided below the upper surface of the resin case and to be inserted into the resin case, and being electrically connected to the semiconductor chip, wherein a first notch is formed over the first portion to the second portion in the electrode, and a first groove is formed to expose a portion, formed in the second portion, in the first notch on the upper surface of the resin case.

Abstract: A semiconductor device according to an aspect of the present technology includes a low-concentration N-type region, a first high-concentration N-type region and a second high-concentration N-type region that are stacked with the low-concentration N-type region interposed therein, a gate electrode that surrounds the low-concentration N-type region as viewed from a stacking direction, which is a direction in which the low-concentration N-type region, the first high-concentration N-type region, and the second high-concentration N-type region are stacked, a first insulating film placed between the gate electrode and the low-concentration N-type region, and a second insulating film placed between the gate electrode and the first high-concentration N-type region. The first high-concentration N-type region is connected to one of a source electrode and a drain electrode. The second high-concentration N-type region is connected to the other of the source electrode and the drain electrode.

Abstract: An interposer for a curved detector. In some embodiments a system includes a curved array photodetector; a first readout integrated circuit, the first readout integrated circuit being substantially flat; and an interposer, between the photodetector and the first readout integrated circuit. The photodetector and the first readout integrated circuit may each have a plurality of electrical contacts. The interposer may include a first conductor connecting a first contact, of the plurality of electrical contacts of the photodetector, and a second contact, of the plurality of electrical contacts of the first readout integrated circuit.