Abstract: A system is provided for adjusting a photo-exposure time of a manufacturing apparatus for semiconductor devices. The system for adjusting the photo-exposure time includes a photo-exposure unit whose photo-exposure time is adjustable according to one or more adjustment signals, a pre-exposure step influence prediction unit that obtains pre-exposure step processing information and extracts parameters that may influence a resulting pattern during photo-exposure, and provides this information as feed forward data, an inspection unit that checks processed steps during a certain period after photo-exposure and provides an inspection value as a feed back data, and a central processing unit that receives the feed forward and feedback data and, by means of a predetermined calculation method, generates the one or more adjustment signals, which are used to adjust the photo-exposure time.

Abstract: A maskless pattern generating system for use in lithography includes a light source that generates a light beam, a programmable pattern generator that generates a pattern image from the light beam based on a control signal input, and a controller to provide the control signal input to the programmable pattern generator based on pattern information provided to the controller. The control signal input instructs the programmable pattern generator to set individual voltage levels corresponding to individual pixels in a pixel array, wherein each of the individual voltage levels corresponds to a greyscale level assigned to a particular individual pixel. Setting the individual voltage levels provide a phase shift of the resulting pattern image beam, allowing the programmable pattern generator to act as a phase shift mask. This maskless pattern writing system acts as a light valve to control pattern imagery, on a pixel by pixel basis, for the purposes of direct writing patterns.

Abstract: An apparatus and method for projecting a pattern includes a light source for emitting a laser; an illuminating unit which illuminates a mask on which a pattern is formed with the laser emitted from the light source and formed in a particular shape; a holder which holds the mask; an optical lens unit which projects the pattern formed on the mask onto a surface of a substrate by the laser illuminated on the mask; and a table which mounts the substrate and moves in at least one direction.

Abstract: Exposure light can pass through a partition wall parallel plate via the opening of the second wall and the opening of the first wall, the first opposing surface of the first wall and the second opposing surface of the second wall respectively oppose one surface and the other surface of the partition wall parallel plate via the first clearance and the second clearance, and the partition wall parallel plate is supported at least at three points such that the third opposing surface of the third wall opposes the entire peripheral surface of the partition wall parallel plate. Further, the third clearance is connected to an exhaust route. Specifically, unnecessary stress is not applied to the partition wall parallel plate, and even if gas tries to flow from space on one side of the partition wall parallel plate into the other space, mixing of gases between two spaces can be effectively suppressed because gas in the third clearance is forcibly exhausted outside via the exhaust route.

Abstract: An exposure apparatus for exposing a substrate using a plurality of masters. The apparatus includes a stage being able to install at least one of the plurality of masters, a first housing surrounding the stage, a second housing for stocking at least one of the plurality of masters, the second housing being installed adjacent to the first housing or installed in an interior of the first housing, the second housing being allowed to communicate with the first housing, and a third housing being installed between an inside space and an outside space of the first housing, the third housing being different from the first and second housings. The first and second housings are filled by an inert gas or are adapted to be evacuated.

Abstract: A mask holder for irradiating UV-rays is disclosed in the present invention. The mask holder includes a lower part having a frame and a mask supporting member supporting a mask, wherein the mask supporting member is in the frame and has a plurality of first connecting portions, and an upper part having a plurality of second connecting portions to be aligned with the first connecting portions.

Abstract: A positioning device for positioning an object inside a lithographic apparatus is described. The positioning device includes a first drive unit and a second drive unit for positioning the object. The first drive unit has a first part connected to the object and a second part connected to a first part of the second drive unit. The positioning device further includes a permanent magnet system constructed and arranged to provide at least part of the force for accelerating or decelerating the object.

Abstract: An optical projection system irradiating a projection light on a work. This optical projection system includes a reflector provided with a first reflection surface and a second reflection surface which reflect the projection light and change a traveling direction of the projection light, an entrance lens which guides the projection light to the first reflection surface, a reflective optics which reflects the projection light reflected by the first reflection surface and guides the projection light to the second reflection surface, an exit lens which guides the projection light reflected by the second reflection to the work, and a position adjustor which supports coaxially the entrance lens and the exit lens so that the entrance lens is spaced a predetermined distance from the exit lens, and the reflector is positioned therebetween.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment subsystem configured to align the substrate on the substrate table relative to the patterning structure. The alignment structure comprises a non-periodic feature which may be detectable as e.g. a capture position or a check position using a reference grating in the alignment subsystem. The non-periodic feature may cause a phase effect in the detected signal of the alignment subsystem or an amplitude effect.

Abstract: In an exposure apparatus, an exposure stage is moved from an exposure position to a work piece feeding and discharging position, exposure light is emitted from a light emitting unit to a first alignment mark on a first mask and an image of the first alignment mark is projected on a first reflecting material, and a reflected image of the first alignment mark image is detected by the alignment microscope thereby detecting position of the first mask, and when the exposure stage is moved to a reversal handing over position, exposure light is emitted to a second alignment mark of a second mask from the light emitting unit, an image of a second alignment mark of a second mark is projected on a second reflecting material, and a reflected image of the projected second alignment mark image is detected by the alignment microscope thereby detecting position of the second mask.

Abstract: An exposure apparatus includes an illumination optical system for illuminating an original with ultraviolet light, a projection optical system for projecting a pattern of the original onto a substrate to be exposed, and a gas purging device for replacing an inside space, where optical components of at least one of the illumination optical system and the projection optical system are placed, with a gas containing substantially no water content or an inert gas.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment subsystem configured to align the substrate on the substrate table relative to the patterning structure. The alignment structure comprises a non-periodic feature which may be detectable as e.g. a capture position or a check position using a reference grating in the alignment subsystem. The non-periodic feature may cause a phase effect in the detected signal of the alignment subsystem or an amplitude effect.

Abstract: A projection optical system for projecting an image of a first object onto a second object includes a first imaging optical system that forms a first intermediate image of the first object, and includes a lens, a second imaging optical system that forms a second intermediate image of the first object, and includes a lens and a concave mirror, and a third imaging optical system that forms an image of the first object onto the second object, and includes a lens, wherein the first, second and third imaging optical systems are arranged along an optical path from the first object in this order, and 0.7<|?1·?2|<3.0 is met where ?1 is a paraxial magnification of the first imaging optical system, and ?2 is a paraxial magnification of the second imaging optical system.

Abstract: An exposure method immerses, in liquid, a surface of an object to be exposed, and a surface of a projection optical system closest to the object, and projects a repetitive pattern formed on a mask via the projection optical system onto the object. The exposure method forms on a pupil of the projection optical system an effective light source that emits, from an axis orthogonal to an optical axis of the projection optical system, light that is parallel to a repetitive direction of the repetitive pattern and has an incident angle ? upon the object, wherein the light includes only s-polarized light in an area of an incident angle ? that satisfies 90°??NA????NA, where ?NA is the largest value of the incident angle ?.

Abstract: A programmable patterning structure for use with a lithographic projection apparatus according to one embodiment of the invention includes a plurality of reflective elements A, B, C, each reflective element having two distributed Bragg reflectors 51, 52. A separation D1 between the two distributed Bragg reflectors is adjustable between a first relation, at which destructive interference between reflections from the first and second distributed Bragg reflectors 51, 52 results in substantially zero reflectivity, and a second relation, in which constructive interference between reflections from the first and second distributed Bragg reflectors 51, 52 results in high reflectivity.

Abstract: A method, system, and apparatus for management of reaction loads in a lithography system is described. An isolated structure is supported by a non-isolated structure. The isolated structure supports a moveable stage. A linear motor includes a first linear motor element and a second linear motor element. The first linear motor element is coupled to the moveable stage. A plurality of parallel flexure plates mount the second linear motor element on the isolated structure. A flexure rod is coupled between the non-isolated structure and the second linear motor element.

Abstract: A stage system that can meet enlargement of a stroke and thus, particularly, that can be suitably incorporated into an electron beam exposure apparatus. The stage system includes an X driving member (3) being movable along an X direction, a Y driving member (2) being movable along a Y direction, an X-Y movable member being movable in the Y direction relative to the X driving member, through a Y lateral static-pressure bearing (44), and also being movable in the X direction relative to the Y driving member through an X lateral static-pressure bearing, wherein a fluid discharged from the X lateral static-pressure bearing is combined with a fluid discharged from the Y lateral static-pressure bearing, and wherein the combined fluid is discharged from a discharging bore (53?) formed in the X driving member.

Abstract: An apparatus including a chamber, a cooler, a circulating path, a first path, a second path, a first shut-off valve, and a second shut-off valve. The cooler cools an inert gas to be supplied to the chamber. The inert gas flows through the chamber and the cooler in the circulating path. The first path, connected to the circulating path at a first position downstream of an outlet port of the cooler and upstream of the chamber, introduces air to the circulating path. The second path, connected to the circulating path at a second position downstream of the chamber and upstream of an inlet port of the cooler, exhausts gas in the chamber. The first shut-off valve, arranged in the circulating path upstream of the first position and downstream of the outlet port of the cooler, closes before the introduction of the air. The second shut-off valve, arranged in the circulating path downstream of the second position and upstream of the inlet port of the cooler, closes, to prevent the air from flowing to the cooler.

Abstract: Measurements of an interferometric measurement system are corrected for variations of atmospheric conditions such as pressure, temperature, and turbulence using measurements from a second harmonic interferometer (SHI). A ramp, representing the dependence of the SHI data on path length, is removed before utilizing the SHI data. The SHI may include a passive Q-switched laser as a light source and Brewster prisms in the receiver module. Optical fibers may be used to conduct light to the detectors. A mirror reflecting the measurement beams has a coating of a thickness selected to minimize the sensitivity of the SHI data to changes in coating thickness.

Abstract: In order to find the positional relation between the reference coordinate system XY which defines the movement of a substrate W and the arrangement coordinate system ?? which corresponds to a plurality of divided areas on the substrate W divided by street lines S? and S?, the substrate W and an observation field are moved relatively. By allowing position detecting method marks Mk on the substrate W to visit the observation field, the street lines S? and S? are detected in the observation field during the observation field. According to the results of the detection, an approximate arrangement coordinate system is corrected. The positional relation between the reference coordinate system XY and the arrangement coordinate system ?? is caught with high accuracy enough to allow the observation field to visit the position detection mark (Mk).