Abstract: In certain aspects, a coated steel substrate comprises a single or multiple-layer electroplated aluminum coating over a steel substrate. The multiple-layer electroplated aluminum coating comprises one or more porous layers and one or more compact layers. The one or more porous layers comprise a material selected from a group consisting of aluminum and aluminum alloys. The one or more compact layers comprise a material selected from a group consisting of aluminum and aluminum alloys. In certain aspects, a method of depositing a multiple-layer aluminum coating over a steel substrate includes electroplating one or more porous aluminum layers over the steel substrate. The one or more porous aluminum layers comprise a material selected from a group consisting of aluminum and aluminum alloys. One or more compact aluminum layers are electroplated over the steel substrate. The one or more compact aluminum layers comprise a material selected from a group consisting of aluminum and aluminum alloys.

Abstract: An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

Abstract: A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

Abstract: There is provided a method of plating comprising: a process of bringing a sealing portion of a seal provided to prevent a contact of a substrate holder that holds a substrate from coming into contact with a plating solution, into contact with pure water; and a process of detecting a leak of the seal, based on presence or absence of a short circuit of a leak detection electrode placed inside of the substrate holder after the sealing portion is brought into contact with the pure water and before the substrate is brought into contact with a chemical solution.

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

Abstract: Methods for fabricating dendritic structures and tags include introducing an electrolyte material onto a substrate, into a substrate, or both onto and into a substrate, and applying an electrical potential to at least one pair of electrodes positioned on the substrate to form one or more dendritic structures on the substrate.

Abstract: There is provided an apparatus for plating a substrate as an object to be plated. The apparatus comprises an anode and a thief tunnel arranged to be located between the substrate and the anode when the substrate is placed to be opposed to the anode. The thief tunnel comprises a body placed away from the substrate and provided with an opening; a plurality of auxiliary electrodes provided in or to the body; and an ion exchange membrane configured to protect the auxiliary electrodes from a plating solution. The plurality of auxiliary electrodes are arranged along a circumference of the opening. At least one of the auxiliary electrodes is configured such that a voltage to be applied to the at least one of the auxiliary electrodes is controlled independently of a voltage to be applied to one or more auxiliary electrodes other than the at least one of the auxiliary electrodes.

Abstract: A plating apparatus includes a workpiece holder, a plating bath, and a clamp ring. The plating bath is underneath the workpiece holder. The clamp ring is connected to the workpiece holder. The clamp ring includes channels communicating an inner surface of the clamp ring and an outer surface of the clamp ring.

Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Abstract: A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.

Abstract: The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.

Abstract: A nano-twinned crystal film and a method thereof are disclosed. The method of fabricating a nano-twinned crystal film includes utilizing an electrolyte solution including copper salt, acid, and a water or alcohol-soluble organic additive, and performing electrodeposition, under conditions of a current density of 20˜100 mA/cm2, a voltage of 0.2˜1.0V, and a cathode-anode distance of 10˜300 mm, to form the nano-twinned crystal film on a surface at the cathode. The nano-twinned crystal film formed by the method includes a plurality of nano-twinned copper grains and a region of random crystal phases between some of adjacent nano-twinned copper grains, wherein at least some of the nano-twinned copper grains have a pillar cap configuration with a wide top and a narrow bottom.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: A plating method capable of controlling a concentration of an additive within a proper range during plating of a substrate is disclosed. The plating method includes: disposing an anode and a substrate, having a via-hole formed in a surface thereof, so as to face each other in a plating solution containing an additive; applying a voltage between the anode and the substrate for filling the via-hole with metal; measuring the voltage applied to the substrate; calculating an amount of change in the voltage per predetermined time; and adjusting a concentration of the additive in the plating solution to keep the amount of change in the voltage within a predetermined control range.

Abstract: In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

Abstract: A plating module includes a plating tank, a substrate holder, an elevating mechanism, an anode, an ionically resistive element, a supply pipe, and a bypass pipe. The substrate holder is for holding a substrate Wf with a surface to be plated Wf-a facing downward. The elevating mechanism is for moving up and down the substrate holder. The anode is disposed inside the plating tank so as to face the substrate Wf held by the substrate holder. The ionically resistive element is disposed between the anode and the substrate Wf. The supply pipe is for supplying a process liquid stored in a reservoir tank from a lower side of the ionically resistive element to the plating tank. The bypass pipe is for discharging the process liquid supplied to the plating tank via the supply pipe from the lower side of the ionically resistive element to the reservoir tank.

Abstract: The present disclosure relates to an electrode for eloxing a component, in particular a component of a vehicle brake system, comprising an electrolyte inlet for feeding an electrolyte into the electrode, an inlet channel, which connects the electrolyte inlet to an electrolyte outlet opening formed in the region of an outer surface of the electrode, an electrolyte inlet opening formed in the region of the outer surface of the electrode at a distance from the electrolyte outlet opening, an electrolyte flow path, which runs between the electrolyte outlet opening and the electrolyte inlet opening along the outer surface of the electrode and is designed to bring a surface portion of the component, which surface portion is to be eloxed, into fluid contact with the electrolyte flowing through the electrolyte flow path, an outlet channel, and an electrolyte outlet.

Abstract: The present invention provides a method of tin-plating a copper alloy for electric or electronic parts and automobile parts which has excellent insertion force, heat-resistant peeling, and solderability, and a tin-plating material of a copper alloy manufactured therefrom.

Abstract: An objective of the present invention is to prevent a prewetting liquid from remaining in an edge portion of a substrate. A plating method for subjecting a substrate to a plating treatment is provided, the substrate including a part to be plated that is exposed to a plating solution and an edge portion that is an outer region of the part to be plated. The plating method includes a first sealing step of bringing a first seal body into contact with the substrate to seal the edge portion of the substrate, a prewetting step of subjecting the sealed substrate to a prewetting treatment, a first seal removing step of removing the first seal body from the prewetted substrate, a substrate holding step of holding the substrate with a substrate holder including a second seal body, and a plating step of applying the plating solution to the substrate held by the substrate holder.