Patents Examined by Howatrd Weiss
  • Patent number: 6864530
    Abstract: A flash memory device includes a substrate having first and second wells. The first well is defined within the second well. A plurality of trenches defines the substrate into a plurality of sub-columnar active regions. The trenches is formed within the first well and extends into the second well. A plurality of flash memory cells are formed on each of the sub-columnar active regions.
    Type: Grant
    Filed: February 6, 2003
    Date of Patent: March 8, 2005
    Assignee: Hynix Semiconductor America, Inc.
    Inventor: Sukyoon Yoon