Abstract: A wavelength conversion member includes: a light-transmissive member; and a wavelength conversion material located on a surface of the light-transmissive member and including: a resin, a phosphor with a median particle diameter of 10 ?m or more and 30 ?m or less, wherein an amount of the phosphor in the wavelength conversion material is 165 parts by mass or more and 400 parts by mass or less relative to 100 parts by mass of the resin, and a filler with a median particle diameter of 5 ?m or more and 40 ?m or less, wherein an amount of the filler in the wavelength conversion material is 5 parts by mass or more and 90 parts by mass or less relative to 100 parts by mass of the resin. A mixture volume ratio of the phosphor and the filler to the resin is 0.5 or more and 1.0 or less.

Abstract: A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by etching the alternating stack, forming a non-conformal blocking layer on the alternating stack in which the opening is formed, adsorbing a deposition inhibitor on a surface of the blocking layer to convert the non-conformal blocking layer into a conformal blocking layer on which the deposition inhibitor is adsorbed, and forming a charge storage layer on the conformal blocking layer.

Abstract: A display device includes a first electrode, and LED chip on the first electrode, an insulating layer embeds the first electrode, contacts a side surface of the LED chip, and exposes an upper surface, a second electrode having translucency in contact with an upper surface of the insulating layer and the upper surface of the LED chip, and a first reflection control layer on an upper surface of the second electrode and having a first opening in an area overlapping with the LED chip. The first reflection control layer has a first surface on a side of the second electrode and a second surface on opposite to the first surface, and a reflectance of the first surface is higher than a reflectance of the second surface.

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first opening, a second opening, and a third opening which are formed by performing first etching and second etching. By the first etching, the first insulator is etched for forming the first opening, the second opening, and the third opening. By the second etching, the first metal oxide, the second insulator, the third insulator, the fourth insulator, the second metal oxide, and the fifth insulator are etched for forming the first opening; the first metal oxide, the second insulator, and the third insulator are etched for forming the second opening; and the first metal oxide is etched for forming the third opening.

Abstract: A method of manufacturing the light emitting package structure is provided. The method includes: a preparation process: mounting a light emitting unit on a substrate; a dispensing process: coating a sealant on a first joint area of the substrate; a cover-enclosing process: disposing a cover element having a second joint area on the substrate, the first joint area and the second joint area joined to each other by the sealant; a vacuum process: reducing an ambient pressure to a first pressure lower than the original ambient pressure; a pressure-adjusting process: adjusting the ambient pressure around the package structure to a second pressure higher than the first pressure; and a curing process: curing the sealant.

Abstract: A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer comprising Al and being provided between the active layer and the p-type semiconductor layer. The electron blocking layer partially includes a high Al composition portion in at least one cross section orthogonal to a stacking direction, the high Al composition portion having an Al composition ratio higher than a surrounding portion.

Abstract: A display device comprises a first substrate including a plurality of pixels, a plurality of light emitting diodes (LEDs) in each of the plurality of pixels, a plurality of light conversion units on the plurality of LEDs, and a plurality of partitions configured to surround each of the plurality of light conversion units. Each of the plurality of light conversion units is in a groove inside the plurality of partitions.

Abstract: A positioning mask includes a body delimiting conduits dimensioned to each accommodate a single functional electronic object and opening through a first opening on a cooperation face, and through a second opening on a reception face. A system for manufacturing an optoelectronic device includes functional electronic objects distributed and fixed on a reception face of a screen substrate. The system further includes a positioning mask of the aforementioned type as well as a supplying unit for freely depositing an assembly of functional electronic objects on the reception face, and a placing unit for positioning the cooperation face facing the reception face, the conduits being arranged at predetermined locations on the reception face where the functional electronic objects are positioned. A method for manufacturing an optoelectronic device is also related.

Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.

Abstract: A process for manufacturing an electroluminescent device, comprising: (a) using a stack comprising, successively: a substrate having a surface; matrix arrays of pixels formed on the surface of the substrate, of columnar shape; an encapsulating layer arranged to cover the matrix arrays of pixels; a dielectric layer formed on the encapsulating layer; (b) performing a directional etch along the normal to the surface of the substrate, of a portion of the dielectric layer extending between the pixels of the matrix arrays of pixels; the dielectric layer having a portion remaining at the end of step (b); and (c) performing a selective chemical etch of the remaining portion of the dielectric layer with a chemical etchant that permits selective etching of the remaining portion of the dielectric layer with respect to the encapsulating layer.

Abstract: A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; and a p-side contact electrode that includes an Rh layer in contact with an upper surface of the p-type semiconductor layer and having a thickness of 10 nm or smaller and an Al layer in contact with an upper surface of the Rh layer and having a thickness of 20 nm or larger.

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: An electronic device includes a semiconductor device, a wiring board, a heat dissipating member, and a housing. The semiconductor device includes a semiconductor element, a conductive member electrically connected to the semiconductor element, and a resin mold sealing the semiconductor element. The wiring board includes a wiring portion on which the semiconductor device is mounted, and a resist portion disposed around the wiring portion. The heat dissipating member is in thermal contact with at least one of surfaces of the semiconductor device. The housing is in thermal contact with the semiconductor device through the heat dissipating member. Each of the resin mold and the heat dissipating member has a thermal conductivity higher than that of the resist portion.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: A display apparatus includes a circuit board including a driving circuit, and a pixel array including a plurality of pixels on the circuit board, each including a plurality of sub-pixels, and a light blocking partition between the plurality of sub-pixels. Each of the plurality of sub-pixels includes a lower light emitting diode (LED) cell configured to generate light of a first wavelength. A first sub-pixel includes a transparent resin structure on the first lower LED cell, a second sub-pixel includes an inter-cell insulating layer on the second lower LED cell and an upper LED cell having on the inter-cell insulating layer and configured to generate light of a second wavelength, and a third sub-pixel includes a wavelength conversion structure on the third lower LED cell and configured to convert light of the first wavelength into light of a third wavelength.

Abstract: A flexible color filter, a method of manufacturing thereof, and a full-color micro light-emitting diode device are provided. The full-color micro light-emitting diode device includes a flexible color filter. The flexible color filter includes a polymer resin substrate, a reflective layer, a light diffusion layer, and a quantum dot layer.

Abstract: A method of manufacturing a light-emitting device includes providing a structure body including a silicon substrate having a first portion, a second portion, and a third portion between the first portion and the second portion, and a first semiconductor layered body including a first light-emitting layer, the first semiconductor layered body being disposed on or above the silicon substrate. The method includes forming a first resin layer covering a lateral side of the silicon substrate and a lateral side of the first semiconductor layered body. The method includes a removal step of removing the first portion to expose a first surface of the first semiconductor layered body, removing the second portion to expose a second surface of the first semiconductor layered body, and leaving the third portion. The method includes forming a first wavelength conversion member on or above the first surface exposed by the removal of the first portion.