Patents Examined by Hui Jey Tsai
  • High voltage deep trench capacitor
    Patent number: 9397233
    Abstract: A semiconductor process and apparatus provide a high voltage deep trench capacitor structure (10) that is integrated in an integrated circuit, alone or in alignment with a fringe capacitor (5). The deep trench capacitor structure is constructed from a first capacitor plate (4) that is formed from a doped n-type SOI semiconductor layer (e.g., 4a-c). The second capacitor plate (3) is formed from a doped p-type polysilicon layer (3a) that is tied to the underlying substrate (1).
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: July 19, 2016
    Assignee: North Star Innovations Inc.
    Inventors: Ronghua Zhu, Vishnu Khemka, Amitava Bose, Todd C. Roggenbauer