Abstract: Methods for optically inspecting a surface (10) of an object (1) and an inspection device (9) including are described. With the method a temporally periodic pattern (13) with different illumination patterns (130) is generated on the surface (10) via a illumination device (8) of the inspection device (9) during an image recording sequence (13), and in the image recording sequence a number of images of the pattern (13) on the surface (10) are recorded via an image recording device (7) of the inspection device (9), wherein generating one of the different illumination patterns (130) is synchronised, respectively, with the image recording of one of the images of the pattern (13), the phase of the pattern (13) is determined from the succession of the recorded known illumination patterns (130) in at least one image point and defects (4, 5) on the surface (10) are detected from deviations of the recorded illumination pattern (130) from the generated known illumination pattern (130).

Abstract: The present invention provides a method for calculating a corrected substrate height map of a first substrate using a height level sensor. The method comprises: sampling the first substrate by means of the height level sensor with the first substrate moving with a first velocity, wherein the first velocity is a first at least partially non-constant velocity of the first substrate with respect to the height level sensor, to generate a first height level data, generating a first height map based on the first height level data, and calculating a corrected substrate height map by subtracting a correction map from the first height map, wherein the correction map is calculated from the difference between a first velocity height map and a second velocity height map.

Abstract: An optical device includes a plurality of laser light sources, an output module having an optical modulator, and a time divider that is disposed between the plurality of laser light sources and the output module and that is configured to divide laser beams emitted from the plurality of laser light sources in time.

Abstract: A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.

Abstract: An inspection device includes a scanning device, a first recognition unit, and a second recognition unit. The scanning device includes a laser sensor that emits laser slit light for measuring a two-dimensional shape, and a movement mechanism that moves the laser sensor in a predetermined direction. The first recognition unit obtains three-dimensional shape data of an inspection object and a workpiece by associating a plurality of two-dimensional shape data obtained by the laser sensor with position data of the laser sensor at the time of measuring the two-dimensional shape. The second recognition unit derives a three-dimensional shape of the workpiece by obtaining a difference between first three-dimensional shape data indicating a three-dimensional shape before the workpiece is laminated on the mold and second three-dimensional shape data indicating a three-dimensional shape after the workpiece is laminated on the mold.

Abstract: A detection apparatus for detecting a mark formed on a substrate uses a detection optical system that irradiates light on the mark on the substrate held by a stage and detects an image of the mark, and a processor that performs a detection process of the mark based on the image of the mark. The processor finds a detection value indicating a position of the mark in an observation field of the detection optical system based on the image of the mark, finds a subregion in which the mark is located among a plurality of subregions in the observation field, and corrects the detection value based on a correction value corresponding to the found subregion among correction values predetermined for the plurality of subregions, respectively.

Abstract: A method for preparing a substrate for an exposure process of a lithographic manufacturing method, the method including imposing different local temperatures across the substrate so as to induce different thermal expansion across the substrate before the exposure process. This method is for compensating for deformation of the substrate induced when the substrate is positioned on a substrate table of a lithographic apparatus. There is also provided a local temperature applicator to implement this technique and to a lithographic apparatus including such a local temperature applicator.

Abstract: A method of controlling a wafer stage includes moving the wafer stage to position an immersion hood over a first sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a second sensor in the wafer stage. The method further includes moving the wafer stage to position the immersion hood over a first particle capture area on the wafer stage after moving the wafer stage to position the immersion hood over the second sensor. The method further includes moving the wafer stage to define a routing track over the first particle capture area. The method further includes moving the wafer stage to position the immersion hood over an area for receiving a wafer on the wafer stage after defining the routing track over the first particle capture area.

Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

Abstract: An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

Abstract: A scatterometer for measuring a property of a target on a substrate includes a radiation source, a detector, and a processor. The radiation source produces a radiated spot on the target. The scatterometer adjusts a position of the radiated spot along a first direction across the target and along a second direction that is at an angle with respect to the first direction. The detector receives radiation scattered by the target. The received radiation is associated with positions of the radiated spot on the target along at least the first direction. The detector generates measurement signals based on the positions of the radiated spot on the target. The processor outputs, based on the measurement signals, a single value that is representative of the property of the target. The processor also combines the measurement signals to output a combined signal and derives, based on the combined signal, the single value.

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)?2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

Abstract: A detection device (20) according to the present disclosure includes an acquisition unit (11) that acquires point cloud data indicating a distance to an object and luminance information obtained from reflected light of a beam emitted when the point cloud data is measured, an edge detection unit (12) that performs edge detection based on the luminance information, a classification unit (21) that classifies, based on distribution of points contained in a crack candidate being a set of points detected as an edge, a plurality of the crack candidates into one of groups, and a label assignment unit (23) that accepts input of a label regarding the group from a user having visually recognized a shape of the crack candidate belonging to the group.

Abstract: The invention relates to an inspection system for quality analysis of a food product, comprising a conveyor for moving it to an inspection area, a lighting device consisting of LEDs that emit a light sequence directed towards the inspection area to light up the product by transmission, a linear camera with at least one line of pixels for collecting a plurality of images in each light sequence of the lighting device, and a focusing member for focusing the beam emitted by the lighting device. Advantageously, the lighting device is activated in a pulsed manner, generating a light sequence with at least two different illuminations, at least one of which is a transmission-pulsed illumination. The lighting device is aligned on the axis formed by the product to be inspected and the linear camera.

Abstract: A method for assessing contrasts on surfaces, in particular for optically identifying structured and/or pictorial surfaces, e.g. of paintings or sculptures, is simple to use independently of the location and safe. For this purpose, the method involves the steps of: focusing a camera onto a prominent image dot on the surface; creating at least two images of a recognizable, high-contrast area of the image dot; and storing the image having the greatest depth of detail as a reference image.

Abstract: A processor of the inspection support device acquires an image obtained by imaging a structure to be inspected and detects damage to the structure on the basis of the acquired image. In a case where two or more types of damage (cracking B and linear free lime C2) to the structure are detected, the processor determines whether or not two or more types of damage are detected from the same or adjacent positions. In a case where determination is made that the cracking B and the linear free lime C2 are detected from the same or adjacent positions when the processor outputs the damage detection result (a damage image, a damage diagram, and the like), the processor preferentially outputs a damage detection result of the linear free lime C2 in accordance with a priority of a damage type.

Abstract: A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

Abstract: Provided are a dark-field confocal microscopy measurement apparatus and method.

Abstract: The present disclosure provides a measurement system and a measurement method related to the field of measurement techniques, the measurement system comprising: a light source configured to produce an original beam, wherein a return beam is formed by the original beam returning from a measured area of a measured object; an optical assembly configured to obtain a pending beam based on the return beam, wherein at least part of the pending beam acts as a first beam; a first detection device configured to obtain first detection information based on the first beam; a mobile device configured to move the optical assembly and the measured object with respect to each other in a direction of an optical axis of the optical assembly; and a processing system configured to determine an actual distance between the optical assembly and a fixed plane of the measured object at each first moment according to the first detection information at each first moment of a plurality of first moments.

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.