Patents Examined by Hunter L. Auyan
  • Patent number: 4550489
    Abstract: A heterojunction semiconductor is provided where the carrier transport dimension is governed by a layer thickness and where the characteristics of the materials self-limit process steps. A field effect transistor is provided wherein the work function is matched across regions to reduce limits on the channel dimension. A vertical transistor is provided wherein a vertical web is formed with precise thickness governed by electrolytic etching using photogenerated carrier current.
    Type: Grant
    Filed: December 1, 1983
    Date of Patent: November 5, 1985
    Assignee: International Business Machines Corporation
    Inventors: Barbara A. Chappell, Terry I. Chappell, Jerry M. Woodall