Patents Examined by Hunter L. Auyane
  • Uses for buried contacts in integrated circuits
    Patent number: 4547959
    Abstract: An integrated circuit is made that includes an insulated gate transistor and a buried contact. The buried contact is used to divide an active device area in two discrete parts, that are doped during source-drain doping in other active device mesas of the integrated circuit. Discrete contacts to these regions, along with the buried contact, provide an additional type of electrical component in the integrated circuit, such as a bipolar lateral transistor.
    Type: Grant
    Filed: February 22, 1983
    Date of Patent: October 22, 1985
    Assignee: General Motors Corporation
    Inventor: Randy A. Rusch